PBSS5540X /T3 NXP Semiconductors, PBSS5540X /T3 Datasheet - Page 4

• Manufacturer Part Number: PBSS5540X /T3
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of PBSS5540X /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 60 MHz
• Dc Collector/base Gain Hfe Min: 250 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5540X,135

NXP Semiconductors
2004 Nov 04
40 V, 5 A
PNP low V
(1) FR4 PCB; 6 cm
(2) FR4 PCB; 1 cm
(3) FR4 PCB; standard footprint.
(mW)
P
1600
1200
tot
800
400
0
−50
Fig.2 Power derating curves.
(1)
(2)
(3)
0
2
2
CEsat
mounting pad for collector.
mounting pad for collector.
50
(BISS) transistor
100
150
T
001aaa229
amb
(°C)
200
4
PBSS5540X
Product data sheet