PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet
PBSS303NX T/R
Specifications of PBSS303NX T/R
Related parts for PBSS303NX T/R
PBSS303NX T/R Summary of contents
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... PNP complement: PBSS303PX. 1.2 Features Low collector-emitter saturation voltage V High collector current capability I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS303NX 4. Marking Table 4. Type number PBSS303NX [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS303NX_2 Product data sheet 30 V, 5.1 A NPN low V Pinning Description emitter collector base ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0. 0.50 0.33 0.20 0.10 0.05 10 ...
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... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 th(j-a) (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − Ceramic PCB standard footprint ...
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... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage t delay time d t rise time ...
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... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) 0.4 (3) 0 − − ...
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... NXP Semiconductors 1 V CEsat (V) −1 10 −2 10 −3 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 −1 ...
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... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS303NX_2 Product data sheet 30 V, 5.1 A NPN low (probe) oscilloscope 450 Ω −0. 12 0.15 A ...
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... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS303NX [1] For further information and the availability of packing methods, see PBSS303NX_2 Product data sheet 30 V, 5.1 A NPN low V 4 ...
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... NXP Semiconductors 11. Soldering 0.85 1.20 4.60 1.20 Fig 16. Reflow soldering footprint SOT89 (SC-62) Not recommended for wave soldering Fig 17. Wave soldering footprint SOT89 (SC-62) PBSS303NX_2 Product data sheet 4.75 2.25 2.00 1.90 1.20 0.20 1. (3x) 3.70 3.95 6.60 2. 1.50 0.70 5.30 Rev. 02 — 20 November 2009 PBSS303NX 30 V, 5.1 A NPN low V (BISS) transistor CEsat 1.70 4.85 Dimensions in mm 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x) 3.50 7.60 solder lands 1 ...
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... NXP Semiconductors 12. Mounting 40 mm 3.96 mm PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm Fig 18. FR4 PCB, standard footprint; ceramic PCB, Al footprint SOT89 (SC-62) PBSS303NX_2 Product data sheet 30 V, 5.1 A NPN low 1.6 mm 001aaa234 O , standard 2 3 Rev. 02 — 20 November 2009 ...
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... Document ID Release date PBSS303NX_2 20091120 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 15 “Package outline SOT89 • Figure 16 “Reflow soldering footprint SOT89 • ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 16. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Mounting Revision history ...