PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet - Page 2

• Manufacturer Part Number: PBSS303NX T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS303NX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 130 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UPAK
• Dc Current Gain Hfe Max: 300 at 0.5 A at 2 V
• Maximum Power Dissipation: 2100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS303NX,115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PBSS303NX_2
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Pin
1
2
3
Type number
PBSS303NX
Type number
PBSS303NX
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Description
emitter
collector
base
Package
Name
SC-62
Rev. 02 — 20 November 2009
Description
plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
Marking code
*5D
30 V, 5.1 A NPN low V
[1]
Simplified outline
3
2
1
PBSS303NX
CEsat
Symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
3
sym042
Version
SOT89
2
1
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