PBSS3540E T/R NXP Semiconductors, PBSS3540E T/R Datasheet - Page 5

• Manufacturer Part Number: PBSS3540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS3540E,115

NXP Semiconductors
7. Characteristics
Table 7.
T
[1]
PBSS3540E_2
Product data sheet
Symbol
I
I
h
V
R
V
V
f
C
CBO
EBO
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
Conditions
V
V
T
V
V
V
V
I
I
I
I
I
I
V
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CB
= 150 °C
= −10 mA; I
= −100 mA; I
= −200 mA; I
= −500 mA; I
= −500 mA; I
= −500 mA; I
= −5 V; I
= −40 V; I
= −40 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −5 V; I
= −10 V; I
Rev. 02 — 11 December 2009
C
C
C
C
C
C
B
E
E
E
= 0 A
= −10 mA
= −100 mA
= −500 mA
= −100 mA
= −100 mA;
B
B
B
B
B
= −0.5 mA
= 0 A
= 0 A;
= i
= −5 mA
= −10 mA
= −50 mA
= −50 mA
= −50 mA
e
= 0 A;
40 V, 500 mA PNP low V
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
40
-
-
-
-
-
-
-
100
-
Typ
-
-
-
-
-
-
-
-
-
-
440
-
-
300
-
PBSS3540E
CEsat
Max
−100
−50
−100
-
-
-
−50
−130
−200
−350
700
−1.2
−1.1
-
10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Unit
nA
μA
nA
mV
mV
mV
mV
mΩ
V
V
MHz
pF
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