PBSS3540E T/R NXP Semiconductors, PBSS3540E T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS3540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS3540E,115

NXP Semiconductors
PBSS3540E_2
Product data sheet
Fig 3.
Fig 5.
V
h
−10
−10
CEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
400
200
−1
−1
−2
−10
−10
0
V
DC current gain as a function of collector
current; typical values
Collector-emitter saturation voltage as a
function of collector current; typical values
I
−1
−1
C
CE
amb
amb
amb
amb
amb
amb
/I
B
= −2 V
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
= 20
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
−10
−10
2
2
I
I
006aaa388
C
C
006aaa390
(mA)
(mA)
Rev. 02 — 11 December 2009
−10
−10
3
3
Fig 4.
Fig 6.
V
V
−10
−10
(V)
(V)
CEsat
− 0.1
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
−1.1
BE
−0.9
−0.7
−0.5
−0.3
40 V, 500 mA PNP low V
−1
−1
−2
−10
−10
V
Base-emitter voltage as a function of collector
current; typical values
T
Collector-emitter saturation voltage as a
function of collector current; typical values
C
C
C
−1
amb
amb
amb
−1
amb
CE
/I
/I
/I
B
B
B
= −2 V
= 100
= 50
= 10
= −55 °C
= 25 °C
= 100 °C
= 25 °C
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
PBSS3540E
CEsat
−10
−10
© NXP B.V. 2009. All rights reserved.
2
(BISS) transistor
2
I
006aaa389
I
C
C
006aaa391
(mA)
(mA)
−10
−10
3
3
6 of 11