MT48LC8M16LFB4-8 IT:G Micron Technology Inc, MT48LC8M16LFB4-8 IT:G Datasheet - Page 55

• Manufacturer Part Number: MT48LC8M16LFB4-8 IT:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48LC8M16LFB4-8 IT:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 19:
Table 20:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
t
Standby current: Power-down mode; All banks idle;
CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
banks active after
Operating current: Burst mode; Page burst; READ or WRITE;
All banks active
Auto refresh current: CKE = HIGH;
CS# = HIGH
Temperature-Compensated Self Refresh (TCSR)
Parameter/Condition
Self refresh current: CKE < 0.2V (E4 = 1, E3 = 1)
Self refresh current: CKE < 0.2V (E4 = 0, E3 = 0)
Self refresh current: CKE < 0.2V (E4 = 0, E3 = 1)
Self refresh current: CKE < 0.2V (E4 = 1, E3 = 0)
RC =
t
RC (MIN)
I
Notes 1, 3, 6, 11, 13, 31 apply to entire table; notes appear on page 57; V
V
I
Note 4 applies to entire table; note appears on page 57; V
±0.2V or V
DD
DD
DD
7 Self Refresh Current Options (x16)
Q = 2.5V ±0.2V or V
Specifications and Conditions (x16)
t
RCD met; No accesses in progress
DD
= +2.5V ±0.2V, V
DD
= +2.5V ±0.2V, V
t
t
t
RFC =
RFC = 15.625µs
RFC = 3.906µs(AT)
DD
Q = +1.8V ±0.15V
t
RFC (MIN)
DD
Q = +1.8V ±0.15V
55
Symbol
I
I
I
I
I
I
I
DD1
DD2
DD3
DD4
DD5
DD6
DD6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
-75M
= V
130
450
115
225
40
3
6
128Mb: x16, x32 Mobile SDRAM
DD
Temperature
Q = +3.3V ±0.3V or V
Max
85ºC
70ºC
45ºC
15ºC
Max
130
450
100
210
40
DD
-8
3
6
Electrical Specifications
= V
DD
©2001 Micron Technology, Inc. All rights reserved.
Q = +3.3V ±0.3V or V
-10
100
450
170
35
95
-75M/-8/-10
3
6
800
500
350
300
DD
= V
Units
mA
mA
mA
mA
mA
mA
µA
DD
Q = 2.5V
Units
Notes
12, 18,
19, 32,
18, 19
12, 33
18, 19
µA
µA
µA
µA
DD
19
33
=