MT48LC8M16LFB4-8 IT:G Micron Technology Inc, MT48LC8M16LFB4-8 IT:G Datasheet - Page 68

• Manufacturer Part Number: MT48LC8M16LFB4-8 IT:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48LC8M16LFB4-8 IT:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 47:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
A0–A9, A11
COMMAND
BA0, BA1
A10
CLK
CKE
DQ
t CMS
t CKS
Alternating Bank Read Accesses
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
Notes:
t CKH
t CMH
t AH
t AH
t AH
t CK
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
1. For this example, BL = 4 and CL = 2.
2. x16: A9 and A11 = “Don’t Care.”
T1
NOP
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 53.
ENABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
BANK 0
T2
READ
t CMH
t CH
CAS Latency - BANK 0
T3
NOP
t LZ
t AC
68
BANK 3
ACTIVE
T4
ROW
ROW
D
OUT
t OH
t AC
m
t RCD - BANK 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
OUT
T5
NOP
m + 1
t OH
t AC
128Mb: x16, x32 Mobile SDRAM
ENABLE AUTO PRECHARGE
COLUMN b 2
D
BANK 3
T6
OUT
READ
m + 2
t OH
t AC
CAS Latency - BANK 3
UNDEFINED
©2001 Micron Technology, Inc. All rights reserved.
t RP - BANK 0
D
T7
OUT
NOP
Timing Diagrams
m + 3
t OH
t AC
BANK 0
T8
ROW
ACTIVE
ROW
D
OUT
t RCD - BANK 0
t OH
t AC
DON’T CARE
b