MT48H16M32LFCM-6:B TR Micron Technology Inc, MT48H16M32LFCM-6:B TR Datasheet - Page 17

• Manufacturer Part Number: MT48H16M32LFCM-6:B TR
• Description: IC SDRAM 512MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H16M32LFCM-6:B TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications – I
Table 7: I
Note 1 applies to all parameters and conditions; V
Table 8: I
Note 1 applies to all parameters and conditions; V
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE;
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Non-power-down mode; All banks idle; CKE = HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks ac-
tive; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after
Operating current: Burst mode; READ or WRITE; All banks active, half
of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE;
t
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Non-power-down mode; All banks idle; CKE =
HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks
active; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks
active after
Operating current: Burst mode; READ or WRITE; All banks active,
half DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
RC (MIN)
t
RCD met; No accesses in progress
DD
DD
t
RCD met; No accesses in progress
Specifications and Conditions (x16)
Specifications and Conditions (x32)
DD
t
t
RFC = 110ns
RFC = 7.8125μs
t
t
RFC = 110ns
RFC = 7.8125μs
DD
DD
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Parameters
/V
/V
DDQ
DDQ
= 1.70–1.95V
= 1.70–1.95V
t
t
17
RC =
RC =
Electrical Specifications – I
t
RC
Symbol
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I
I
I
I
I
I
I
I
DD2N
DD3N
Symbol
DD2P
DD3P
DD1
DD4
DD5
DD6
I
ZZ
I
I
I
I
I
DD2N
DD3N
I
I
I
DD2P
DD3P
DD1
DD4
DD5
DD6
I
ZZ
300
105
100
90
10
20
10
-6
5
3
300
100
100
90
10
20
10
-6
5
3
Max
Max
300
100
© 2007 Micron Technology, Inc. All rights reserved.
-75
80
18
95
10
8
5
3
300
100
-75
80
18
90
10
8
5
3
DD
Units
mA
mA
mA
mA
mA
mA
mA
Units
μA
μA
Parameters
mA
mA
mA
mA
mA
mA
mA
μA
μA
2, 3, 4, 6
2, 3, 4, 7
2, 3, 4, 6
2, 3, 4, 7
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
5, 8
5, 8
5
5