MT48H16M32LFCM-6:B TR Micron Technology Inc, MT48H16M32LFCM-6:B TR Datasheet - Page 71

IC SDRAM 512MBIT 166MHZ 90VFBGA

MT48H16M32LFCM-6:B TR

Manufacturer Part Number
MT48H16M32LFCM-6:B TR
Description
IC SDRAM 512MBIT 166MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H16M32LFCM-6:B TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (16M x 32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 41: WRITE With Auto Precharge Interrupted by a READ
Figure 42: WRITE With Auto Precharge Interrupted by a WRITE
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Internal
States
Internal
States
Command
Command
Note:
Note:
Address
Address
Bank m
Bank m
Bank n
Bank n
CLK
CLK
DQ
DQ
1. DQM is LOW.
1. DQM is LOW.
Page active
Page active
NOP
T0
T0
NOP
WRITE - AP
WRITE - AP
Page active
Bank n,
Page active
Bank n,
Bank n
Bank n
Col a
T1
D
T1
Col a
D
IN
IN
WRITE with burst of 4
WRITE with burst of 4
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T2
T2
NOP
D
NOP
D
IN
IN
71
READ - AP
Bank m,
T3
T3
Col d
Bank m
D
NOP
IN
Interrupt burst, write-back
t
WR - bank n
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
T4
D
NOP
CL = 3 (bank m)
t
Interrupt burst, write-back
WR - bank n
IN
WRITE with burst of 4
T5
T5
NOP
NOP
D
t
IN
Precharge
RP - bank n
PRECHARGE Operation
T6
T6
NOP
D
NOP
D
OUT
t RP - bank n
Precharge
IN
© 2007 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
T7
T7
D
NOP
NOP
D
t WR - bank m
OUT
t RP - bank m
IN
Write-back

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