IS61LPD51236A-200B3-TR ISSI, Integrated Silicon Solution Inc, IS61LPD51236A-200B3-TR Datasheet - Page 16

• Manufacturer Part Number: IS61LPD51236A-200B3-TR
• Description: IC SRAM 18MBIT 200MHZ 165FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LPD51236A-200B3-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61VPD51236A, IS61VPD102418A, IS61LPD51236A ,IS61LPD102418A
WRITE CYClE TIMING
16
DATA
Address
DATA
ADSC
ADSP
CLK
ADV
BWE
CE2
CE2
BWx
OUT
GW
OE
CE
IN
t
t
t
High-Z
CES
CES
High-Z
CES
t
t
SS
AS
Single Write
WR1
t
ADV must be inactive for ADSP Write
DS
t
t
t
WS
WS
WS
t
t
t
t
SH
t
AH
CEH
CEH
CEH
t
KH
WR1
1a
t
KC
t
t
t
WH
WH
WH
t
DH
WR2
t
KL
BW4-BW1 only are applied to first cycle of WR2
t
WS
CE2 and CE2 only sampled with ADSP or ADSC
WR2
2a
CE Masks ADSP
Burst Write
t
AVS
t
WH
2b
t
AVH
Integrated Silicon Solution, Inc. — 1-800-379-4774
2c
ADSP is blocked by CE inactive
2d
ADSC initiate Write
Write
WR3
WR3
3a
Unselected
Unselected with CE2
07/08/08
Rev. C