IS61LPD51236A-200B3-TR ISSI, Integrated Silicon Solution Inc, IS61LPD51236A-200B3-TR Datasheet - Page 22

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IS61LPD51236A-200B3-TR

Manufacturer Part Number
IS61LPD51236A-200B3-TR
Description
IC SRAM 18MBIT 200MHZ 165FBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc

Specifications of IS61LPD51236A-200B3-TR

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (512K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LPD51236A-200B3-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61VPD51236A, IS61VPD102418A, IS61LPD51236A ,IS61LPD102418A
TaP Electrical Characteristics Over the Operating Range
Notes:
TaP aC ElECTRICal CHaRaCTERISTICS
Notes:
1. Both t
2. Test conditions are specified using the load in TAP AC test conditions. t
22
Symbol
V
V
V
V
V
V
I
1. All Voltage referenced to Ground.
2. Overshoot: V
x
Oh1
Oh2
Ol1
Ol2
Symbol Parameter
t
f
t
t
t
t
t
t
t
t
t
t
Ih
Il
Tcyc
Tf
Th
Tl
TMss
TdIs
cs
TMsh
TdIh
ch
TdOV
TdOx
Undershoot:V
Power-up: V
cs
and t
TCK Clock cycle time
TCK Clock frequency
TCK Clock HIGH
TCK Clock LOW
TMS setup to TCK Clock Rise
TDI setup to TCK Clock Rise
Capture setup to TCK Rise
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture hold after Clock Rise
TCK LOW to TDO valid
TCK LOW to TDO invalid
ch
Ih
Ih
Il
< 2.6V and V
refer to the set-up and hold time latching data requirements from the boundary scan register.
(AC) ≤ V
(AC)
Parameter
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
0.5V for t
dd
+1.5V for t
dd
< 2.4V and V
t
Tcyc
t
/2,
Tcyc
ddq
/2,
< 1.4V for t < 200 ms.
(1,2)
(OVER OPERaTING RaNGE)
Test Conditions
Vss ≤ V I ≤ V
I
I
Oh
Oh
I
I
Ol
Ol
= –2.0 mA
= –100 µA
Integrated Silicon Solution, Inc. — 1-800-379-4774
= 2.0 mA
= 100 µA
r
/t
f
= 1 ns.
(1,2)
ddq
Min.
–0.3
Min.
100
1.7
2.1
1.7
–5
40
40
10
10
10
10
10
10
0
V
dd
Max.
Max.
0.7
0.2
0.7
10
20
5
+0.3
Units
MHz
Unit
07/08/08
mA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev. C
V
V
V
V
V
V

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