IDT71V3577S75BG IDT, Integrated Device Technology Inc, IDT71V3577S75BG Datasheet - Page 9

• Manufacturer Part Number: IDT71V3577S75BG
• Description: IC SRAM 4MBIT 75NS 119BGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71V3577S75BG

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 75ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 71V3577S75BG

DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTE:
1. The LBO, TMS, TDI, TCK and TRST pins will be internally pulled to V
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTES:
1. All values are maximum guaranteed values.
2. At f = f
3. For I/Os V
AC Test Conditions
(V
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
Symbol
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
DDQ
I
I
Symbol
I
SB1
SB2
I
DD
ZZ
V
V
|I
|I
|I
LO
LI
LI
OL
OH
|
|
|
MAX,
= 3.3V)
Operating Power Supply Current
CMOS Standby Power
Supply Current
Clock Running Power
Supply Current
Full Sleep Mode Supply Current
HD
inputs are cycling at the maximum frequency of read cycles of 1/t
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
ZZ , LBO and JTAG Input Leakage Current
= V
DDQ
Parameter
- 0.2V, V
LD
= 0.2V. For other inputs V
Parameter
Device Se lected, Outputs Open, V
Device Deselected, Outputs Open, V
Device Deselected, Outputs Open, V
V
V
V
ZZ > V
DDQ
DDQ
DDQ
= Max., V
= Max., V
= Max., V
See Figure 1
HD,
(1)
0 to 3V
1.5V
1.5V
V
2ns
HD
DD
= V
= Max.
IN
IN
IN
Test Conditions
DD
> V
> V
> V
5280 tbl 10
DD
- 0.2V, V
IH
HD
HD
and the ZZ in will be internally pulled to V
I
I
V
V
V
OL
OH
or < V
DD
DD
OUT
or < V
or < V
= +8mA, V
6.42
= -8mA, V
= Max., V
= Max., V
CYC
= 0V to V
9
LD
IL
LD
LD
AC Test Load
, f = f
while ADSC = LOW; f=0 means no input lines are changing.
(Typical, ns)
= 0.2V.
, f = 0
, f = f
DD
DD
∆tCD
DD
(1)
IN
IN
MAX
DD
DD
(V
DDQ
MAX
= Max.,
= 0V to V
= 0V to V
= Min.
(2,3)
= Min.
(2)
= Max.,
= Max.,
Test Conditions
, Device Deselected
DD
Figure 2. Lumped Capacitive Load, Typical Derating
(2,.3)
= 3.3V ± 5%)
6
5
4
3
2
1
DD
DD
Commercial and Industrial Temperature Ranges
Com'l Only
20 30 50
7.5ns
255
30
90
30
I/O
SS
if they are not actively driven in the application.
Com'l
200
Capacitance (pF)
30
85
30
Figure 1. AC Test Load
80
8ns
Z
0
100
= 50Ω
210
Ind
35
95
35
Min.
2.4
___
___
___
___
Com'l
180
30
80
30
50Ω
8.5ns
Max.
V
0.4
30
___
5
5
DDQ
190
Ind
35
90
35
5280 drw 03
5280 tbl 09
5280 drw 05
5280 tbl 08
/2
Unit
µ A
µ A
µ A
Unit
V
V
mA
mA
mA
mA
200
,
,