MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 123

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Figure 97: INTERNAL DATA MOVE (85h-10h) with Random Data Input with Internal ECC Enabled
Figure 98: ERASE BLOCK Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
I/O[7:0]
I/O[7:0]
R/B#
WE#
RDY
CLE
ALE
CE#
RE#
00h
Source address
(5 cycles)
Address
t
WC
60h
add 1
35h
Row
Row address
t
R_ECC
add 2
Row
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
add 3
Row
Status
00h
D0h
t
WB
D
D
OUT
OUT
123
Busy
t
BERS
Asynchronous Interface Timing Diagrams
is optional
85h
Destination address
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(5 cycles)
READ STATUS
Address
2Gb: x8, x16 NAND Flash Memory
command
70h
Data
(Unlimitted repetitions are possible)
t
WHR
85h
Column address 1, 2
I/O0 = 0, Pass
I/O0 = 1, Fail
(2 cycles)
Address
Status
© 2009 Micron Technology, Inc. All rights reserved.
Data
10h
t
PROG_ECC
Don’t Care
70h