IDT70824L25PF IDT, Integrated Device Technology Inc, IDT70824L25PF Datasheet - Page 11

• Manufacturer Part Number: IDT70824L25PF
• Description: IC SARAM 64KBIT 25NS 80TQFP
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT70824L25PF

• Format - Memory: RAM
• Memory Type: SARAM
• Memory Size: 64K (4K x 16)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 80-TQFP, 80-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 70824L25PF

Random Access Port: AC Electrical Characteristics Over
the Operating Temperature and Supply Voltage Range
Random Access Port: AC Electrical Characteristics
Over the Operating Temperature and Supply Voltage
NOTES:
1. Transition measured at 0mV from steady state. This parameter is guaranteed with the AC Output Test Load (Figure 1) by device characterization, but is not
2. 'X' in part number indicates power rating (S or L).
3. OE is continuously HIGH, OE = V
4. CMD access follows standard timing listed for both read and write accesses, (CE = V
5. Industrial temperature: for specific speeds, packages and powers contact your sales office.
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
t
RC
AA
ACE
BE
OE
OH
CLZ
BLZ
OLZ
CHZ
BHZ
OHZ
PU
PD
WC
CW
AW
AS
WP
BP
WR
WHZ
DW
DH
OW
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory
production tested.
turn off and on the data to be placed on the bus for the required t
write pulse is the specified t
Symbol
Symbol
Read Cycle Time
Chip Enable Access Time
Byte Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Select Low-Z Time
Byte Select Low-Z Time
Output Enable Low-Z Time
Chip Select High-Z Time
Byte Select High-Z Time
Output Select High-Z Time
Chip Select Power-Up Time
Chip Select Power-Down Time
Chip Enable to End-of-Write
Byte Enable Pulse Width
Data Set-up Time
Data Hold Time
Output Active from End-of-Write
Address Access Time
Write Cycle Time
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write Enable Output High-Z Time
WP
(3)
. For the CE controlled write cycle, OE may be LOW with no degradation to t
Parameter
Parameter
IH
(1)
(1)
. If during the R/W controlled write cycle the OE is LOW, t
(1)
(1)
(3)
(1)
(1)
(3)
(1)
DW
. If OE is HIGH during the R/W controlled write cycle, this requirement does not apply and the minimum
Min.
Min.
____
____
____
____
____
____
____
____
____
20
20
15
15
13
15
13
3
3
3
2
0
0
0
0
3
Com'l Only
Com'l Only
70824X20
70824X20
6.42
11
Max.
Max.
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
20
20
20
20
10
10
10
10
9
IH
when CMD = V
Min.
Min.
.____
____
____
____
____
____
____
____
____
25
25
20
20
20
20
15
3
3
3
2
0
0
0
0
3
Com'l Only
Com'l Only
WP
70824X25
70824X25
must be greater or equal to t
Max.
Max.
Military and Commercial Temperature Ranges
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
25
25
25
10
12
12
25
12
11
IL
) or (CMD = V
CW
timing.
Min.
Min.
____
____
____
____
____
____
____
____
____
35
35
25
25
25
25
20
3
3
3
2
0
0
0
0
3
(2,4,5)
70824X35
70824X35
Com'l &
Com'l &
Military
Military
(2,4,5)
IH
when CE = V
Max.
Max.
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
35
35
35
15
15
15
15
35
15
WHZ
+ t
DW
Min.
Min.
____
____
____
____
____
____
____
____
____
45
45
30
30
30
30
25
3
3
3
2
0
0
0
0
3
IL
to allow the I/O drivers to
70824X45
70824X45
).
Com'l &
Com'l &
Military
Military
Max.
Max.
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
45
45
45
20
45
15
15
15
15
3099 tbl 20
3099 tbl 21
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns