SDIN2C2-1G-T SanDisk, SDIN2C2-1G-T Datasheet - Page 26

• Manufacturer Part Number: SDIN2C2-1G-T
• Description: IC INAND FLASH 1GB 169FBGA
• Manufacturer: SanDisk

Specifications of SDIN2C2-1G-T

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Speed: 50MHz
• Interface: SD/SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -25°C ~ 85°C
• Package / Case: 169-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Revision 1.1
© 2007 SanDisk Corporation
A.2.1
Appendix A
A.1
A.2
SanDisk iNAND Power Domains
Capacitor Connection Guidelines
FCAP Connections
SanDisk iNAND has three power domains assigned to VDD_H, VDD_F, and FCAP as
shown in Table 1.
Table 1. Power Domains
The FCAP (C2) ball must only be connected to an external capacitor that is connected to
VSS. This signal may not be left floating. The capacitor’s specifications and its placement
instructions are detailed below.
The capacitor is part of an internal voltage regulator that provides power to the controller.
Caution:
external signal or power supply may cause the device to malfunction.
The trace requirements from the FCAP (C2) ball to the capacitor are as follows:
•
•
The capacitor requirements are as follows:
•
•
•
VDD_H
VDD_F
Resistance: <2 ohm
Inductance: <5 nH
Capacitance: >=2.2 uF
Voltage Rating: >=6.3 V
Dielectric: X7R or X5R
FCAP
Pin
Failure to follow the guidelines below or connecting the FCAP ball to any
Power Delivery and Capacitor Specifications
Power Domain
PRELIMINARY
Host Interface
Memory
Internal
A-1
Appendix A –Power Delivery/Capacitor Specifications
Supported voltage ranges:
Supported voltage range:
FCAP is the internal regulator connection to an
external decoupling capacitor.
High Voltage Region: 3.3V (nominal)
High Voltage Region: 3.3V (nominal)
Low Voltage Region: 1.8V (nominal)
SanDisk iNAND Product Manual
Comments
02/09/07