SDIN2C2-1G-T SanDisk, SDIN2C2-1G-T Datasheet - Page 27

• Manufacturer Part Number: SDIN2C2-1G-T
• Description: IC INAND FLASH 1GB 169FBGA
• Manufacturer: SanDisk

Specifications of SDIN2C2-1G-T

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Speed: 50MHz
• Interface: SD/SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -25°C ~ 85°C
• Package / Case: 169-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Revision 1.1
© 2007 SanDisk Corporation
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2
1
Trace Requirements (C_5):
A.2.2
Resistance < 2 ohm
Inductance < 5nH
VDD_H and VDD_F Connections
The iNAND has two power domains labeled: VDD_H and VDD_F. Currently both power
domains can be connected to the same 3.3V (nom) power supply. However, in order to
provide maximum flexibility and support low power operation in future iNAND devices,
the PCB should be designed as follows:
•
•
SanDisk recommends providing separate bypass capacitors for each power domain as
shown in Figure 1.
Note: Signal routing in the diagram is for illustration purposes only and the final routing
depends on your PCB layout. Also, for clarity, the diagram does not show the VSS
connection. All balls marked VSS should be connected to a ground (GND) plane.
Figure 1. Recommended Power Domain Connections
Dielectric: X7R or X5R
Capacitance >= 2.2uF
Voltage >= 6.3V
All VDD_F balls should be connected to a 3.3V supply
All VDD_H balls should have the option of being connected either to a 3.3V or 1.8V
supply
Capacitor C_5:
A
B
C_5
PRELIMINARY
FCAP
VDD_
C
C2
C6
H
VSS
D
VDD_
E
E6
F
C_3
VDD_F
F
F5
VSS
A-2
Close to
Ball F5
G
View
Top
VSS
H
Appendix A –Power Delivery/Capacitor Specifications
C_4
VDD_F = 3.3V (nom)
VDD_
J10
J
F
VDD_
K
K9
F
C_2=C_4<=100nF
C_1=C_3>=2.2uF
L
VDD
M
M4
_H
VDD_
N
N4
H
SanDisk iNAND Product Manual
VDD_H
VDD_
P
P3
P5
H
C_1
VSS
Close to
Ball P3
VSS
C_2
VDD_H
supply
power
02/09/07