MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 47

• Manufacturer Part Number: MT46H8M16LFCF-10 IT
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10 IT

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 12:
Table 13:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Parameter
V
V
Voltage on any ball relative to V
Parameter/Condition
Supply voltage
I/O supply voltage
Address and Command Inputs
Input voltage high
Input voltage low
Clock Inputs (CK, CK#)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential crossing voltage
Data Inputs
DC input high voltage
AC input high voltage
DC input low voltage
AC input low voltage
Data Outputs
DC output high voltage: Logic 1 (I
DC output low voltage: Logic 0 (I
Leakage Current
Input leakage current
Any input 0V ≤ V
(All other balls not under test = 0V)
Output leakage current
(DQs are disabled; 0V ≤ V
Output levels: Full drive option
High current (V
Low current (V
Output levels: Reduced drive option
High current (V
Low current (V
DD
DD
Q supply voltage relative to V
supply voltage relative to V
Absolute Maximum DC Ratings
AC/DC Electrical Characteristics and Operating Conditions
Notes: 1–5; notes appear on pages 52–54; V
OUT
OUT
OUT
OUT
IN
Notes:
= 0.373V, maximum V
= 0.763V, maximum V
≤ V
= V
= V
DD
DD
DD
OUT
Q - 0.373V, minimum V
Q - 0.763V, minimum V
1. V
2. Voltage on any I/O may not exceed voltage on V
Stresses greater than those listed in Table 12 may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
≤ V
SS
SS
DD
DD
SS
OL
Q)
, V
Q
OH
DD
= 0.1mA)
= –0.1mA)
Q, and V
REF
REF
)
)
REF
REF
DD
)
)
L must be within 300mV of each other at all times.
V
Symbol
IN
V
V
, V
DD
DD
DD
Q
OUT
47
= +1.8 ±0.1V, V
Symbol
V
V
V
V
V
V
V
ID
ID
IH
IH
I
V
V
I
IL
IL
V
V
V
I
V
I
OHR
DD
V
I
OLR
OH
OZ
OL
OH
II
DD
(
(
(
(
OL
(
(
IH
IN
IX
IL
DC
AC
DC
AC
DC
AC
Q
)
)
128Mb: 8 Meg x 16 Mobile DDR SDRAM
)
)
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–1.0
–0.5
–0.5
0.8
0.4
0.6
0.4
0.7
0.8
0.9
DD
Min
–0.3
–0.3
–0.3
–0.3
–1.5
×
× V
× V
× V
× V
× V
× V
1.7
1.7
–1
–5
–1
3
Q = +1.8 ±0.1V
–
–
V
DD
DD
DD
DD
DD
DD
DD
DD
Q.
Q
Q
Q
Q
Q
Q
Q
Max
2.3
2.3
2.3
V
0.2
V
V
V
0.6
V
V
0.3
0.2
0.1 × V
DD
DD
DD
DD
DD
DD
Electrical Specifications
Max
–1.5
× V
× V
× V
× V
Q
Q
Q
Q
Q
Q
1.9
1.9
–
1
5
1
3
–
+ 0.3
+ 0.3
+ 0.3
+ 0.3
+ 0.3
+ 0.3
DD
DD
DD
DD
DD
©2006 Micron Technology, Inc. All rights reserved.
Q
Q
Q
Q
Q
Units
V
V
V
Units
mA
mA
mA
mA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
25, 28, 33
25, 28, 33
25, 28, 33
25, 28, 33
Notes
Notes
25, 33
25, 33
Advance
8, 27
8, 27
9, 27
1
1
2
27
32
32