MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 58

• Manufacturer Part Number: MT46H8M16LFCF-10 IT
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10 IT

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 36:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
COMMAND
ADDR
DQS
CK#
CKE
DM
DQ
CK
Power-Down Mode (Active or Precharge)
Notes:
t
t
t
VALID 1
IS
IS
IS
VALID
T0
t
t
t
IH
IH
IH
1. If this command is a PRECHARGE (or if the device is already in the idle state), then the
2. No column accesses are allowed to be in progress at the time power-down is entered.
3. There must be at least one clock pulse during
t
CK
power-down mode shown is precharge power-down. If this command is an ACTIVE (or if at
least one row is already active), then the power-down mode shown is active power-down.
Power-Down
Enter 2
t
Mode
IS
NOP
T1
t
CH
Must not exceed Refresh device limits
t
CL
T2
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Ta0
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Power-Down
t
PDX time.
Mode
Exit 3
Ta1
NOP
t
PDX
NOP
©2006 Micron Technology, Inc. All rights reserved.
Ta2
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Timing Diagrams
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DON’T CARE
VALID
VALID
Tb1
Advance