MT48V8M16LFB4-10:G Micron Technology Inc, MT48V8M16LFB4-10:G Datasheet - Page 76
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MT48V8M16LFB4-10:G
Manufacturer Part Number
MT48V8M16LFB4-10:G
Description
IC SDRAM 128MBIT 100MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48LC8M16LFB4-75MG_TR.pdf
(80 pages)
Specifications of MT48V8M16LFB4-10:G
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48V8M16LFB4-10:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT48V8M16LFB4-10:G TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 55:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
A0–A9, A11
COMMAND
BA0, BA1
CKE
A10
CLK
DQ
Write – Full-page Burst
t CMS
t CKS
Notes:
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t CK
t RCD
1. x16: A9 and A11 = “Don’t Care.”
2.
3. Page left open; no
x32: A8, A9, and A11 = “Don’t Care.”
t
See Table 17 on page 53.
WR must be satisfied prior to PRECHARGE command.
T1
NOP
t CMS
t CL
t DS
COLUMN m 1
D
T2
WRITE
BANK
IN
t CMH
m
t CH
t DH
t
RP.
t DS
D
IN
T3
NOP
m + 1
t DH
76
512 (x16) locations within same row
t DS
D
IN
T4
NOP
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
128Mb: x16, x32 Mobile SDRAM
IN
T5
m + 3
NOP
t DH
(
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(
(
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(
(
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(
(
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)
t DS
D
Tn + 1
IN
NOP
m - 1
t DH
©2001 Micron Technology, Inc. All rights reserved.
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
command to stop.
Timing Diagrams
BURST TERM
Tn + 2
DON’T CARE
2, 3
Tn + 3
NOP