MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 30
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MT46H8M32LFB5-6:A TR
Manufacturer Part Number
MT46H8M32LFB5-6:A TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M32LFB5-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1280-2
MT46H8M32LFB5-6:A TR
MT46H8M32LFB5-6:A TR
Figure 15:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Command
Address
Address
Consecutive READ Bursts
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Shown with nominal
4. Example applies only when READ commands are issued to the same device.
OUT
CL = 2
n (or b) = data-out from column n (or column b).
NOP
NOP
T1
T1
CL = 3
T1n
t
AC,
D
READ
Bank,
READ
Bank,
Col b
Col b
OUT
n
T2
T2
t
DQSCK, and
30
D
n+1
T2n
T2n
OUT
D
D
OUT
n+2
n
NOP
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
T3
OUT
t
256Mb: x16, x32 Mobile DDR SDRAM
DQSQ.
Transitioning data
D
n+1
D
T3n
T3n
n+3
OUT
OUT
D
n+2
D
T4
NOP
T4
NOP
OUT
OUT
b
D
n+3
T4n
T4n
D
OUT
b+1
OUT
©2005 Micron Technology, Inc. All rights reserved.
D
T5
NOP
T5
NOP
D
Don’t Care
b+2
OUT
b
OUT
D
T5n
T5n
b+1
b + 3
D
OUT
OUT
Operations