MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 48
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MT46H8M32LFB5-6:A TR
Manufacturer Part Number
MT46H8M32LFB5-6:A TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M32LFB5-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1280-2
MT46H8M32LFB5-6:A TR
MT46H8M32LFB5-6:A TR
Power-Down
Figure 33:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Power-Down Command (in Active or Precharge Modes)
Note:
Power-down (Figure 42 on page 70) is entered when CKE is registered LOW. If power-
down occurs when all banks are idle, this mode is referred to as precharge power-down;
if power-down occurs when there is a row active in any bank, this mode is referred to as
active power-down. Entering power-down deactivates all input and output buffers,
including CK and CK# and excluding CKE. Exiting power-down requires the device to be
at the same voltage as when it entered power-down and received a stable clock.
While in power-down, CKE LOW must be maintained at the inputs of the Mobile DDR
SDRAM, while all other input signals are “Don’t Care.” The power-down state is exited
when CKE is registered HIGH (in conjunction with a NOP or DESELECT command). A
NOP or DESELECT command must be maintained on the command bus until
satisfied.
RAS#, CAS#, WE#
RAS#, CAS#, WE#
The power-down duration is limited by the refresh requirements of the device.
BA0–BA1
A0–A12
CK#
CKE
CS#
CS#
CK
BA0,1
Don’t Care
Or
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
©2005 Micron Technology, Inc. All rights reserved.
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