MT45V256KW16PEGA-55 WT TR Micron Technology Inc, MT45V256KW16PEGA-55 WT TR Datasheet - Page 6

IC PSRAM 4MBIT 55NS 48VFBGA

MT45V256KW16PEGA-55 WT TR

Manufacturer Part Number
MT45V256KW16PEGA-55 WT TR
Description
IC PSRAM 4MBIT 55NS 48VFBGA
Manufacturer
Micron Technology Inc

Specifications of MT45V256KW16PEGA-55 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
4M (256K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-30°C ~ 85°C
Package / Case
48-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1415-2
Ball Descriptions
Table 1:
PDF: 09005aef832450a3/Source: 09005aef82f264aa
8mb_4mb_ap_3v_psram_p22z__2.fm - Rev. B 4/08 EN
G4, G3, H5, H4,
H3, H2, D4, C4,
C3, B4, B3, A5,
D2, C2, C1, B1,
D3, E4, F4, F3,
G1, F1, F2, E2,
G6, F6, F5, E5,
D5, C6, C5, B6
Assignment
VFBGA Ball
E3, G2, H6
A4, A3
B5
A1
A2
B2
G5
A6
D6
D1
H1
E1
E6
VFBGA Ball Descriptions
DQ[15:0]
Symbol
A[17:0]
V
V
DNU
WE#
OE#
UB#
CE#
LB#
ZZ#
V
V
NC
CC
SS
CC
SS
Q
Q
Output
Supply
Supply
Supply
Supply
Input/
Input
Input
Input
Input
Input
Input
Input
Type
Description
Address inputs: Inputs for the address accessed during READ or WRITE operations.
The address lines are also used to define the value to be loaded into the CR.
Chip enable: Activates the device when LOW. When CE# is HIGH, the device is
disabled and goes into standby power mode.
Lower byte enable: DQ[7:0].
Output enable: Enables the output buffers when LOW. When OE# is HIGH, the
output buffers are disabled.
Upper byte enable: DQ[15:8].
Write enable: Enables WRITE operations when LOW.
Sleep enable: When ZZ# is LOW, the CR can be loaded, or the device can enter one
of two low-power modes (DPD or PAR).
Data inputs/outputs.
Device power supply (2.7–3.6V): Power supply for device core operation.
I/O power supply (2.7–3.6V): Power supply for input/output buffers.
V
V
No connect: Not internally connected.
Do not use: DNUs must be left unconnected or tied to ground.
SS
SS
Q must be connected to ground.
must be connected to ground.
4Mb: 3.0V Core Async/Page PSRAM Memory 256K x 16
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Ball Descriptions

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