M58LW032D110N6 STMicroelectronics, M58LW032D110N6 Datasheet - Page 24

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M58LW032D110N6

Manufacturer Part Number
M58LW032D110N6
Description
IC FLASH 32MBIT 110NS 56TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M58LW032D110N6

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
110ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1725

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M58LW032D
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
Table 12. Operating and AC Measurement Conditions
Figure 7. AC Measurement Input Output
Waveform
Table 13. Capacitance
Note: 1. T
24/50
Supply Voltage (V
Input/Output Supply Voltage (V
Ambient Temperature (T
Load Capacitance (C
Input Pulses Voltages
Input and Output Timing Ref. Voltages
Symbol
V DDQ
C
2. Sampled only, not 100% tested.
C
OUT
0V
IN
A
= 25°C, f = 1 MHz
Input Capacitance
Output Capacitance
DD
)
L
)
Parameter
A
)
Parameter
DDQ
)
V DDQ /2
AI00610
Test Condition
V
V
OUT
IN
Grade 1
Grade 6
= 0V
= 0V
ment
12., Operating and AC Measurement
Designers should check that the operating condi-
tions in their circuit match the measurement condi-
tions when relying on the quoted parameters.
Figure 8. AC Measurement Load Circuit
0.1µF
V DDQ
Conditions
0.1µF
V DD
Min
–40
2.7
2.7
0
Typ
6
8
M58LW032D
0 to V
0.5 V
C L includes JIG capacitance
30
DEVICE
UNDER
DDQ
DDQ
TEST
summarized
Max
3.6
3.6
70
85
Max
12
8
1.3V
1N914
3.3k
Conditions.
in
C L
Units
Unit
°C
°C
pF
V
V
V
V
pF
pF
DQ S
AI03459
Table

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