M58LW032D110N6 STMicroelectronics, M58LW032D110N6 Datasheet - Page 5

• Manufacturer Part Number: M58LW032D110N6
• Description: IC FLASH 32MBIT 110NS 56TSOP
• Manufacturer: STMicroelectronics

Specifications of M58LW032D110N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1725

SUMMARY DESCRIPTION
The M58LW032D is a 32 Mbit (4Mb x 8 or 2Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7V to 3.6V)
core supply.
The memory is divided into 32 blocks of 1Mbit that
can be erased independently so it is possible to
preserve valid data while old data is erased. Pro-
gram and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a Program or Erase operation can be detected and
any error conditions identified in the Status Regis-
ter. The command set required to control the
memory is consistent with JEDEC standards.
The Write Buffer allows the microprocessor to pro-
gram from 1 to 16 Words in parallel, both speeding
up the programming and freeing up the micropro-
cessor to perform other work. A Word Program
command is available to program a single word.
Erase can be suspended in order to perform either
Read or Program in any other block and then re-
sumed. Program can be suspended to Read data
in any other block and then resumed. Each block
can be programmed and erased over 100,000 cy-
cles.
The M58LW032D has several security features to
increase data protection.
I
Block Protection, where each block can be
individually protected against program or
erase operations. All blocks are protected
during power-up. The protection of the blocks
is non-volatile; after power-up the protection
I
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The Reset/Power-Down pin is used to apply a
Hardware Reset to the enabled memory and to set
the device in power-down mode.
The device features an Auto Low Power mode. If
the bus becomes inactive during read operations,
the device automatically enters Auto Low Power
mode. In this mode the power consumption is re-
duced to the Auto Low Power supply current.
The STS signal is an open drain output that can be
used to identify the Program/Erase Controller sta-
tus. It can be configured in two modes: Ready/
Busy mode where a static signal indicates the sta-
tus of the P/E.C, and Status mode where a pulsing
signal indicates the end of a Program or Block
Erase operation. In Status mode it can be used as
a system interrupt signal, useful for saving CPU
time.
The memory is available in TSOP56 (14 x 20 mm)
and TBGA64 (10x13mm, 1mm pitch) packages.
In addition to the standard version, the packages
are also available in Lead-free version, in compli-
ance with JEDEC Std J-STD-020B, the ST ECO-
PACK 7191395 Specification, and the RoHS
(Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free solder-
ing processes.
status of each block is restored to the state
when power was last removed.
Program Erase Enable input V
erase operations are not possible when the
Program Erase Enable input V
128 bit Protection Register, divided into two 64
bit segments: the first contains a unique
device number written by ST, the second is
user programmable. The user programmable
segment can be protected.
PEN
PEN
M58LW032D
, program or
is low.
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