TH58100FT Toshiba, TH58100FT Datasheet - Page 30

• Manufacturer Part Number: TH58100FT
• Description: IC FLASH 1GBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TH58100FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Multi Block Erase
address have been input.
“71H”.
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
Internal addressing in relation with the Districts
•
•
•
Address input restriction for the Multi Block Erase operation
(Restriction)
It is prohibited to select blocks across 2-chips.
Maximum one block should be selected from each District.
(Acceptance)
There is no order limitation of the District for the address input.
Any number of the Districts can be select for the erase operation.
So, for example, following operation is in acceptance.
(60) [District 2] (60) [District 0] (60) [District 1] (D0)
It requires no mutual address relation between the selected blocks from each District.
The device carries out a Multi Block Erase operation when it receives a “D0H” command after some sets of the
After the “D0H” command, the total results of Erase operation is shown through the Status Read (2) command
The Status discription is following.
To use Multi Block Erase operation, the internal addressing should be conscious in relation with the Districts.
In selecting the blocks for the Multi Block Erase operation, following is the restriction and acceptance.
The device consists of 2-chips, each of which have 4 Districts.
Each District consists from 1024 erase blocks.
The allocation rule is follows.
RY
Chip 0, District 0: Block 0, Block 4, Block 8, Block 12, ···.., Block 4092
Chip 0, District 1: Block 1, Block 5, Block 9, Block 13, ···.., Block 4093
Chip 0, District 2: Block 2, Block 6, Block 10, Block 14, ···.., Block 4094
Chip 0, District 3: Block 3, Block 7, Block 11, Block 15, ···.., Block 4095
Chip 1, District 0: Block 4096, Block 4100, Block 4104, Block 4108, ···.., Block 8188
Chip 1, District 1: Block 4097, Block 4101, Block 4105, Block 4109, ···.., Block 8189
Chip 1, District 2: Block 4098, Block 4102, Block 4106, Block 4110, ···.., Block 8190
Chip 1, District 3: Block 4099, Block 4103, Block 4107, Block 4111, ···.., Block 8191
/
BY
District 0 Pass/Fail
District 1 Pass/Fail
District 2 Pass/Fail
District 3 Pass/Fail
Total Pass/Fail
Write Protect
Ready/Busy
Not Used
STATUS
D0
Pass: 0
Pass: 0
Pass: 0
Pass: 0
Pass: 0
Do not care
Ready: 1
Protect: 0
Status Read
command
71
OUTPUT
Fail: 1
Fail: 1
Fail: 1
Fail: 1
Fail: 1
Busy: 0
Not Protect: 1
I/O
Fail
Pass
If at least one fail occurred in Max 4 Blocks
erase operation, it shows “Fail” condition.
If fail occurred in District 0 area, it shows
“Fail” condition.
as I/O2.
I/O1 describes total Pass/Fail condition.
I/O2 describes Pass/Fail condition.
I/O3, I/O4 and I/O5 are as same manner
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TH58100FT