TC58128AFTI Toshiba, TC58128AFTI Datasheet - Page 32
TC58128AFTI
Manufacturer Part Number
TC58128AFTI
Description
IC FLASH 128MBIT 50NS 48TSOP
Manufacturer
Toshiba
Datasheet
1.TC58128AFTI.pdf
(33 pages)
Specifications of TC58128AFTI
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Speed
50ns
Interface
Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TC58128FTI
TC58128FTI
TC58128FTI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC58128AFTI
Manufacturer:
HYNIX
Quantity:
1 387
(15)
Failure phenomena for Program and Erase operations
The following possible failure modes should be considered when implementing a highly reliable system.
Block
Page
Single Bit
•
•
The device may fail during a Program or Erase operation.
ECC: Error Correction Code
Block Replacement
Program
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
memory
FAILURE MODE
Buffer
Erase Failure
Programming
Failure
Programming
Failure
1 → 0
Error occurs
Figure 28.
Status Read after Erase → Block Replacement
Status Read after Program → Block Replacement
(1) Block Verify after Program → Retry
(2) ECC
DETECTION AND COUNTERMEASURE SEQUENCE
Block A
Block B
reprogram the data into another Block (Block B)
by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
When an error happens in Block A, try to
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TC58128AFT