TC55VBM416AFTN55 Toshiba, TC55VBM416AFTN55 Datasheet - Page 12
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TC55VBM416AFTN55
Manufacturer Part Number
TC55VBM416AFTN55
Description
IC SRAM 16MBIT 55NS 48TSOP
Manufacturer
Toshiba
Datasheet
1.TC55VBM416AFTN55.pdf
(14 pages)
Specifications of TC55VBM416AFTN55
Format - Memory
RAM
Memory Type
SRAM
Memory Size
16M (1M x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC55VBM416AFTN55
Manufacturer:
TOSHIBA
Quantity:
100
Company:
Part Number:
TC55VBM416AFTN55
Manufacturer:
TOSHIBA
Quantity:
100
Company:
Part Number:
TC55VBM416AFTN55
Manufacturer:
AMD
Quantity:
319
Note:
(1)
(2)
(3)
(4)
(5)
In CE1 controlled data retention mode, minimum standby current mode is entered when CE2 0.2 V or
CE2 V
When CE1 is operating at the V
transition of V
In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 0.2 V.
In UB (or LB ) controlled data retention mode, minimum standby current mode is entered when CE1
When UB (or LB ) is operating at the V
the transition of V
0.2 V or CE1
DD
0.2 V.
DD
from 2.3(2.7) to 2.2V(2.4 V).
V
DD
DD
from 2.3(2.7) to 2.2V(2.4 V).
0.2 V, CE2 0.2 V or CE2 V
IH
(min.) level, the operating current is given by I
IH
(min.) level, the operating current is given by I
DD
0.2 V.
TC55VBM416AFTN55
2003-12-25 12/14
DDS1
DDS1
during the
during