TC58FVM6B5BTG65 Toshiba, TC58FVM6B5BTG65 Datasheet - Page 30
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TC58FVM6B5BTG65
Manufacturer Part Number
TC58FVM6B5BTG65
Description
IC FLASH 64MBIT 65NS 48TSOP
Manufacturer
Toshiba
Datasheet
1.TC58FVM6T5BTG65.pdf
(80 pages)
Specifications of TC58FVM6B5BTG65
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
65ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TC58FVM6B5BTG65GCH
TC58FVMGB5BTG65GCH
TC58FVMGB5BTG65GCH
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC58FVM6B5BTG65
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
17.2. Block Protect
t
t
t
t
t
17.3. Program and Erase characteristics
t
t
t
t
t
t
t
t
(1) Auto Chip Erase Time and Auto Block Erase Time include internal pre program time.
(2) Minimum interval between resume and the following suspend command is 150 μ s. If it's shorter than 150 μ s, auto block erase time
is expand more than maximum(5 s).
SYMBOL
SYMBOL
VPT
VPS
CESP
VPH
PPLH
PPW
PPW
PPAW
PPAW
PCEW
PCEW
PBEW
EW
Auto-Program Time (Word Mode)
Accelerated Auto-Program Time (Word Mode)
Auto-Page program time
Accelerated Auto-Page program time
Auto Chip Erase Time
Accelerated Auto Chip Erase Time
Auto Block Erase Time
Erase/Program Cycle
V
V
CE Set-up Time
OE Hold Time
WE Low-Level Hold Time
ID
ID
Transition Time
Set-up Time
(1)
(1)
PARAMETER
(1)
PARAMETER
TC58FVM6(T/B)5B(TG/XG)65
MIN
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
TYP.
MIN
100
0.7
11
58
21
94
81
⎯
4
4
4
4
8
MAX
MAX
2400
2400
300
300
675
675
5
⎯
⎯
⎯
⎯
⎯
⎯
(2)
2006-05-10 30/80
Cycle.
UNIT
UNIT
μ s
μ s
μ s
μ s
μ s
μ s
μ s
μ s
μ s
s
s
s