MX884HTTR IXYS, MX884HTTR Datasheet - Page 156
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
MX884HTTR
Manufacturer Part Number
MX884HTTR
Description
IC CURRENT MONITOR TSOT23-6
Manufacturer
IXYS
Specifications of MX884HTTR
Function
Current Monitor
Sensing Method
High-Side
Voltage - Input
3 ~ 60 V
Mounting Type
Surface Mount
Package / Case
TSOT-23-6, TSOT-6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output
-
Operating Temperature
-
Accuracy
-
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Thyristor / Diode Modules
I
134
New
TAV
Type
MCD 132-08io1
MCD 132-12io1
MCD 132-14io1
MCD 132-16io1
MCD 132-18io1
MCD 161-20io1
MCD 161-22io1
MCD 162-08io1
MCD 162-12io1
MCD 162-14io1
MCD 162-16io1
MCD 162-18io1
MCD 200-14io1
MCD 200-16io1
MCD 200-18io1
MCD 224-20io1
MCD 224-22io1
MCD 220-08io1
MCD 220-12io1
MCD 220-14io1
MCD 220-16io1
MCD 225-12io1
MCD 225-14io1
MCD 225-16io1
MCD 225-18io1
MCD 250-08io1
MCD 250-12io1
MCD 250-14io1
MCD 250-16io1
MCD 250-18io1
MCD 255-12io1
MCD 255-14io1
MCD 255-16io1
MCD 255-18io1
MCD 310-08io1
MCD 310-12io1
MCD 310-14io1
MCD 310-16io1
MCD 310-18io1
MCD 310-20io1
MCD 310-22io1
MCD 312-12io1
MCD 312-14io1
MCD 312-16io1
MCD 312-18io1
MCD 500-12io1*
MCD 500-16io1
MCD 500-18io1
MCD 500-22io1
MCD 501-12io1*
MCD 501-14io1
MCD 501-16io1
MCD 501-18io1
MCD 700-12io1W* 1200
MCD 700-16io1W 1600
MCD 700-18io1W 1800
* for other configurations please contact factory
= 130 - 700 A
1200
1400
1600
1800
2000
2200
1200
1400
1600
1800
1400
1600
1800
2000
2200
1200
1400
1600
1200
1400
1600
1800
1200
1400
1600
1800
1200
1400
1600
1800
1200
1400
1600
1800
2000
2200
1200
1400
1600
1800
1200
1600
1800
2200
1200
1400
1600
1800
V
V
800
800
800
800
800
RRM
DRM
V
130
165
181
216
240
250
221
287
250
320
320
320
500
500
503
700
I
FAV
A
42°C
T
T
°C
85
85
85
85
85
85
85
85
85
85
85
85
89
80
85
W
C
=
I
1294 18200 0.85 0.27
1071 15400 0.88 0.46
1195 16000 0.85 0.30
1331 18200 0.85 0.27
T(RMS)
300
300
300
340
400
400
400
450
450
500
500
520
A
10 ms
125°C
125°C
125°C
125°C
45°C
4750
6000
6000
8000
8000
8500
8000
9000
9000
9200
8000
9200
I
FSM
A
Data according to IEC 60747 and refer to a single diode or thyristor unless otherwise stated.
0.80 1.50
0.80 1.60
0.88 1.15
0.80 1.00
0.80 0.76
0.90 1.00
0.80 0.76
0.85 0.82
0.80 0.68
0.80 0.82
0.80 0.82
0.80 0.68
V
V
T0
mΩ
r
T
T
125
125
125
125
130
140
130
140
130
140
140
140
125
125
125
125
°C
VJM
0.230
0.155
0.155
0.130
0.139
0.139
0.157
0.129
0.140
0.112
0.112
0.120
0.062
0.062
0.062
0.062
R
K/W
thJC
per Chip
R
R
K/W
0.10 X126b
0.07
0.07 X126b
0.05
0.04 X131b
0.04 X129b
0.04 X131b
0.04 X129b
0.04 X131b
0.04 X129b
0.04 X129b
0.04 X131b
0.02 X136b
0.02
0.02 X138b
0.09
thJW
thCH
=
X137b
Fig.
No.
X126b
Weight = 150 g
X129b
Weight = 210 g
X131b
Weight = 750 g
X136b
Weight = 1550 g
X137b
Weight = 2100 g
X138b
Weight = 1500 g
on pages O-30...O-52
Outline drawings
Package style
MCD...io1
WC-500
WC-500
WC-501
Y4
Y2
Y1
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