NCP5304DR2G ON Semiconductor, NCP5304DR2G Datasheet - Page 4

• Manufacturer Part Number: NCP5304DR2G
• Description: IC DRIVER HI/LOW SIDE HV 8-SOIC
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5304DR2G

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 100ns
• Current - Peak: 250mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 10 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 160 ns
• Fall Time: 75 ns
• Supply Voltage (min): 10 V
• Supply Current: 5 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Bridge Type: Full Bridge, Half Bridge
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. Parameter guaranteed by design
2. Turn−off propagation delay @ Vbridge = 600 V is guaranteed by design
3. See characterization curve for Dt parameters variation on the full range temperature.
4. Timing diagram definition see Figure 7.
5. Timing diagram definition see Figure 5 and Figure 6.
Output high short circuit pulsed current V
Output low short circuit pulsed current V
Output resistor (Typical value @ 25°C) Source
Output resistor (Typical value @ 25°C) Sink
High level output voltage, V
Low level output voltage V
Turn−on propagation delay (Vbridge = 0 V)
Turn−off propagation delay (Vbridge = 0 V or 50 V) (Note 2)
Output voltage rise time (from 10% to 90% @ V
Output voltage fall time (from 90% to 10% @V
Propagation delay matching between the High side and the Low side
@ 25°C (Note 3)
Internal fixed dead time (Note 4)
Minimum input width that changes the output
Maximum input width that does not change the output
Low level input voltage threshold
Input pull−down resistor (V
High level input voltage threshold
Logic “1” input bias current @ V
Logic “0” input bias current @ V
V
V
Hysteresis on V
Vboot Start−up voltage threshold reference to bridge pin
(Vboot_stup = Vboot − Vbridge)
Vboot UV Shut−down voltage threshold
Hysteresis on Vboot
Leakage current on high voltage pins to GND
(V
Consumption in active mode (V
both driver outputs)
Consumption in inhibition mode (V
V
Vboot current consumption in inhibition mode
ELECTRICAL CHARACTERISTIC
OUTPUT SECTION
DYNAMIC OUTPUT SECTION
INPUT SECTION
SUPPLY SECTION
CC
CC
CC
BOOT
UV Start−up voltage threshold
UV Shut−down voltage threshold
current consumption in inhibition mode
= V
BRIDGE
CC
= DRV_HI = 600 V)
DRV_XX
IN
BIAS
< 0.5 V)
CC
−V
IN_XX
IN_XX
CC
@ I
DRV_XX
= Vboot, fsw = 100 kHz and 1 nF load on
Rating
= Vboot)
= 5 V @ 25°C
= 0 V @ 25°C
DRV_XX
DRV
(V
DRV
@ I
CC
= V
= 0 V, PW v 10 ms (Note 1)
= 20 mA
DRV_XX
CC
= V
CC
CC
= 15 V) with 1 nF load
boot
, PW v 10 ms (Note 1)
= 15 V) with 1 nF load
= 15 V, V
= 20 mA
http://onsemi.com
GND
= V
4
bridge
, −40°C < T
Vboot_shtdwn
Vboot_shtdwn
VCC_shtdwn
Vboot_stup
VCC_stup
VCC_hyst
I
DRVsource
I
Symbol
I
V
HV_LEAK
V
DRVsink
ICC1
ICC2
ICC3
ICC4
DRV_H
t
t
R
R
DRV_L
t
t
PW1
PW2
V
R
V
I
I
OFF
DT
ON
Dt
IN+
IN−
OH
tr
tf
OL
IN
IN
IN
J
< 125°C, Outputs loaded with 1 nF)
Min
2.3
8.0
7.3
0.3
8.0
7.3
0.3
65
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
T
J
−40°C to 125°C
Typ
250
500
100
100
100
200
250
200
0.7
0.2
8.9
8.2
0.7
8.9
8.2
0.7
30
10
85
35
20
50
−
−
−
−
5
−
5
4
Max
170
170
160
190
400
1.6
0.6
0.8
2.0
9.9
9.1
9.9
9.1
60
20
75
35
50
25
40
−
−
−
−
−
−
−
5
−
−
Units
mA
mA
mA
kW
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
ns
ns
ns
ns
W
W
V
V
V
V
V
V
V
V
V
V