MX877R IXYS, MX877R Datasheet - Page 100

• Manufacturer Part Number: MX877R
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX877R

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 80mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

Insulated Gate Bipolar Transistors (IGBT)
Xtreme light Punch Through (XPT)
IGBTs are the latest generation IGBTs,
which are ideal for extremely critical ap-
plications, requiring lowest conduction
and switching losses and 10 μs short-
circuit withstand capability and a positive
temp coefficient of V
Either discrete or co-packaged with ul-
trafast soft recovery Sonic diodes, IXYS
XPT IGBTs have lower saturation vol-
tage V
ergy (E
power dissipation and higher power den-
sity in a wide range of motion control ap-
plications, such as air conditioners, refri-
gerator compressors, home appliances,
AC drives, and circulating pump speed
controllers.
Non-Punch Through (NPT) IGBTs Ideal
for paralleling, also sometimes preferred
for motor drive applications.
‚D‘ Class – IXDxxxx part numbers
600/1200 V rated NPT IGBTs ‚E‘ Class
– IXExxxx part numbers 1200 V rated
NPT IGBTs.
Soft-Punch Through (NPT3) IGBTs are
the Third Generation NPT IGBTs They
feature extremely low E
very fast turn-off times with negligible tail
current.
Trench IGBTs in the 600 V and 1200 V
class for slow to medium-speed swit-
ching applications.
All these IGBTs feature 10 μs short-cir-
cuit-withstand capability and a positive
temperature coefficient of V
feature extremely low E
very fast turn-off times with negligible tail
current.
G-series Legacy IGBTs
The “G” series IGBTs use HDMOS™, a
planar, high density process which incor-
porates new techniques to improve ope-
rating characteristics and stability at high
voltages. This technology combines with
a poly silicon gate cell structure, which
gives this family of IGBTs a peak current
capability of two times its 90°C current
rating.
78
CE(sat)
on
+ E
and low total switching en-
off
). These result in reduced
CE(sat)
.
on
on
and E
and E
CE(sat)
. They
off
off
and
and
G-series, A B & C Class IGBTs
G-Series IGBTs are available with and
without a body diode and very high vol-
tage IGBTs are included under this fami-
ly. Both NPT and PT IGBTs are designa-
ted as G-series and classified as being
“A” for low speed, “B” for medium-speed
and “C” for high speed or very high speed
applications. In the same-series, today,
IXYS is trying to push “A2”, “B2” and “C2”
class of IGBTs, as well as “A3”, “B3”, and
“C3” class with the development of the
latest Polar IGBT platform.
G-series, A2 B2 & C2 Class IGBTs
IXYS’ new A2, B2, C2-Class IGBTs offer
greater system design flexibility and the
opportunity to reach the best compro-
mise between conflicting requirements
of switching frequency, efficiency and
cost. This family of IGBTs exhibit excel-
lent choices of saturation voltage versus
speed, resulting in much improved effici-
encies over traditional NPT IGBTs.
These IGBTs use IXYS’ next generati-
on IGBT Technology, tailored to provide
significant improvements in efficiency for
off-line power conversion applications
requiring 600V devices with switching
frequency ranges of DS to 10kHz, 1kHz
to 100kHz and 25kHz to 200kHz for
each of the IGBT Classes respectively.
The A2 and B2-Class IGBTs have up to
25% lower saturation voltage and lower
turn-off versus prior generation of IGBTs.
These performance improvements are
further enhanced by a 25% reduction in
thermal resistance, additionally providing
significant increases in power handling
and reliability.
G-series, A3 B3 & C3 Class (GenX3™)
IGBTs
Manufactured
HDMOS IGBT process, these IGBTs
are suitable for high power applications
requiring switching frequencies upwards
of 150kHz. These devices utilize IXYS
proven Punch-Through (PT) technology
providing higher surge current capabili-
ties and a saturation voltage with a ne-
gative temperature coefficient, reducing
conduction losses with increasing tem-
perature.
using
IXYS’
robust
S-series Legacy (SCSOA) IGBTs
Legacy S-series IGBTs combine the ad-
vantages of MOS gated drive simplicity
with the high current handling capability
of bipolar transistors. These “S” series
devices are ultra-rugged IGBTs that can
survive overload and accidental short
circuit currents for a guaranteed period
of time. This allows the design of gating
circuits that would detect these fault cur-
rents and turn-off the IGBT before device
degradation.
The basic cell design characteristics are
very similar to power MOSFETs. The
drive circuitry required to control the
gate is basically the same as a power
MOSFETs. During turn-on of the IGBT,
minority carrier injection into the N-drift
region modulates the body on-resistance
to a level 10 to 20 times lower than an
equivalently sized MOSFET, resulting in
a proportionate 5 to 10 times increase in
current handling capability.
S-series A B & C Class IGBTs
The “S” series IGBTs such as IXSA,
IXSH, IXSN, etc. are Short-Circuit Safe
Operating Area (SCSOA) rated devices.
They are members of an advanced se-
ries of N-channel power MOS products,
which use HDMOS™, a proprietary ver-
tical DMOS technology developed by
IXYS. HDMOS™ is a planar, high densi-
ty process, which incorporates new tech-
niques to improve operating characteris-
tics and stability at high voltage. They can
survive overload and accidental short
circuits currents for a guaranteed period
of time. This allows the design of gating
circuits that would detect these fault cur-
rents and turn-off the IGBT before device
degradation.
S-series, B2 Class IGBTs
This family of Short Circuit Rated IGBTs
feature a 25% reduction in lower satu-
ration voltage and lower turn-off energy.
Their improved performance enables
better efficiency in a broad range of mo-
tor control applications. This family uti-
lizes IXYS’ next generation IGBT techno-
logy to provide significant improvements
in efficiency for switching frequencies up
to 30kHz, while also providing a robust
short circuit capability. Performance is
further enhanced by a 25% reduction in
thermal resistance, providing significant
increases in power handling and reliabi-
lity.