MX877R IXYS, MX877R Datasheet - Page 108

• Manufacturer Part Number: MX877R
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX877R

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 80mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

IGBT Modules
86
 MII 300-12E4
 New
High Power
Single Switch
• low loss and smooth switching
• AlSiC base plate for high power cycling capacity
• AlN substrate for low thermal resistance
Type
MIO 1800-17E10
MIO 2400-17E10
MIO 1200-25E10
MIO 1500-25E10
MIO 1200-33E10
High Voltage Package with enlarged strike and creepage distance
MIO 1200-33E11
MIO 600-65E11
NPT
IGBT Modules
Type
1200 V Half Bridge, NPT
MII 75-12A3
MII 100-12A3
MII 145-12A3
MII 150-12A4
MII 200-12A4
MII 300-12A4
1200 V Boost Chopper, NPT
MID 75-12A3
MID 100-12A3
MID 145-12A3
MID 150-12A4
MID 200-12A4
MID 300-12A4
MID 550-12A4
1200 V Buck Chopper, NPT
MDI 75-12A3
MDI 100-12A3
MDI 145-12A3
MDI 150-12A4
MDI 200-12A4
MDI 300-12A4
MDI 550-12A4
1200 V Half Bridge, NPT
MII 400-12E4
1200 V Boost Chopper, NPT
MID 400-12E4
1200 V Buck Chopper, NPT
MDI 400-12E4
X127a/b/c
1200
1200
1200
1200
1200
1200
V
1700
1700
2500
2500
3300
3300
6500
V
V
CES
V
CES
3
3
X134
3
T
T
C
C
IGBT
2500
3300
1650
2100
1650
1650
IGBT
= 25°C
840
= 25°C
135
160
180
270
330
135
160
180
270
330
670
135
160
180
270
330
670
280
420
420
420
I
I
C25
C25
A
A
90
90
90
X128a/b/c/d
T
C
T
IGBT
C
= 80°C
110
120
180
220
110
120
180
220
460
110
120
180
220
460
200
300
300
300
I
IGBT
1800
2400
1200
1500
1200
1200
C80
A
60
90
60
90
60
90
= 80°C
600
I
C80
A
V
T
X135
CE(sat)
J
IGBT
= 25°C
T
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.3
2.2
2.2
2.2
2.2
2.2
2.2
2.3
2.0
2.2
2.2
2.2
V
V
J
X130a/b/c
CE(sat) typ
IGBT
= 25°C
2.3
2.3
2.5
2.7
3.1
3.1
4.2
typ
V
T
J
= 125°C
IGBT
10.5
15.0
11.5
21.0
29.0
10.5
15.0
11.5
21.0
29.0
59.0
10.5
15.0
11.5
21.0
29.0
59.0
20.0
30.0
30.0
30.0
E
mJ
5.6
5.6
5.6
T
off
J
= 125°C
IGBT
1250
1450
1950
2000
3500
670
980
E
mJ
off
Outline drawings
Package style
O-30...O-52
IGBT
R
K/W
0.33
0.22
0.18
0.17
0.11
0.09
0.33
0.22
0.18
0.17
0.11
0.09
0.05
0.33
0.22
0.18
0.17
0.11
0.09
0.05
0.11
0.08
0.08
0.08
on pages
thJC
0,0085
0,0085
Outline drawings
See data sheet for
0,009
0,007
0,009
0,008
0,011
IGBT
pin arrangement
R
K/W
O-30...O-52
thJC
on pages
T
C
diode
= 25°C
100
150
150
200
300
450
100
150
150
200
300
450
750
100
150
150
200
300
450
750
300
450
450
450
I
T
F25
A
C
diode
= 25°C
I
tbd
tbd
F25
A
T
MII
C
diode
= 80°C
290
290
100
100
130
200
270
100
100
130
200
270
460
100
100
130
200
270
460
190
290
I
T
F80
A
60
60
60
C
diode
1800
2400
1200
1500
1200
1200
= 80°C
600
I
F80
A
MID
X127a
X128a
X127b
X128b
X127c
X128c
X130a
X130b
X130c
Fig.
No.
X134
X135
MDI
Fig.
No.