MX877R IXYS, MX877R Datasheet - Page 182

• Manufacturer Part Number: MX877R
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX877R

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 80mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

Integrated Circuits
Gate Drive Evaluation Boards
MOSFET/IGBT Gate Drive Modules/Gate Drive IC Evaluation Boards
The EV-Series MOSFET Gate Drive
Modules are general purpose gate drive
circuits designed to drive the DE-Series
RF POWER MOSFETs, as well as in-
dustry-standard MOSFETs and IGBTs.
Designed using IXYS/Colorado gate
drive ICs, they serve as a system de-
velopment tool for the design engineer,
and as a convenient platform for the eva-
luation of the DE-Series RF MOSFET
transistors. The EVDD415 and EVIC420
are designed to drive DE-Series RF
MOSFETs. The EVDI402, EVDD404,
EVDD409, EVDI409 and EVDD414
gate drive modules are designed to
drive MOSFETs or IGBTs in various pa-
ckage types, including TO-220, TO-247,
TO-264 or SOT-227 packages.
Gate Drive Module / Evaluation Board Selection Guide
160
Ø
Gate Drive Module
New
EVDD 430CI
EVDD 430MCI
EVDD 430YI
EVDD 430MYI
EVDI 430CI
EVDI 430MCI
EVDI 430YI
EVDI 430MYI
EVDN 430CI
EVDN 430MCI
EVDN 430YI
EVDN 430MYI
EVDS 430SI
EVBD 4400
EVDI 402
EVD N402
EVDD 404
EVDI 404
EVDN 404
EVDI 409
EVDN 409
EVDD 414
EVDI 414
EVDN 414
EVDD 415
EVIC 420A
EVIC 420B
EV 6R11S3
EV 6R11S7
* Connectable Power MOSFET or IGBT is not included
Installed Device
IXDD 430CI
IXDD 430MCI
IXDD 430YI
IXDD 430MYI
IXDI 430CI
IXDI 430MCI
IXDI 430YI
IXDI 430MYI
IXDN 430CI
IXDN 430MCI
IXDN 430YI
IXDN 430MYI
IXDS 430SI
IXBD 4400 Chip Set TO-247, TO-264
IXDI 402PI
IXDN 402PI
IXDD 404PI
IXDI 404PI
IXDN 404PI
IXDI 409YI
IXDN 409YI
IXDD 414YI
IXDI 414YI
IXDN 414YI
IXDD 415SI
DEIC 420
DEIC 420
IX 6R11S3
IX 6R11S7
The evaluation board design allows the
MOSFET or IGBT to be attached to a
heat sink, and in so doing the board as-
sembly can be used as a ground refe-
renced, low side power switch for both
single-ended and push-pull configura-
tions. They may be used as pulse width
agile, high power switching modules in
pulse generators, RF generators, pulsed
laser diode drivers and other high vol-
tage, high speed applications.
By utilizing design techniques developed
by DEI, the EVDD 415 and EVIC 420
gate drive modules can drive DE-Series
MOSFET transistors at frequencies up to
45 MHz, provide continuously variable
output pulse widths from ~5 ns to DC,
and rise times of <3 ns (actual perfor-
mance is dependent upon the specific
gate drive module and the MOSFET de-
vice used).
Connectable Package *
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-247, TO-268, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
TO-220, TO-247, TO-264, SOT-227
DEI DE-150, DEI DE-275
DEI DE-150, DEI DE-275
DEI DE-375, DEI DE-475
TO-247,TO-264
TO-247,TO-264
EVDD404 with IXDD404PI *
EVDD409 with IXDD409YI *
EVDD415 with IXDD415SI *
EVIC420A with DEIC420 *
EV6R11 with IX6R11S3 *