MX879R IXYS, MX879R Datasheet - Page 101

• Manufacturer Part Number: MX879R
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX879R

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 120mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

Insulated Gate Bipolar Transistors (IGBT)
These 600V Short Circuit Rated B2-
Class Medium Speed IGBTs are tar-
geted at the expanding use of variable
speed drive technology in the appliance
and automation industry. Typical industri-
al products are motor drives for robotics
and conveyer belts. Common products in
the appliance field include washing ma-
chines, refrigerators, vacuum cleaners
and air conditioners. These high efficient
IGBTs are also optimal for inverters for
electrical scooters and light electrical ve-
hicles applications.
L-series IGBTs
These IGBTs are high voltage devices
designed and optimized for capacitor
discharge circuits. With voltage ratings
from 2500V to 4500V, these devices can
be used as substitutes for high voltage
MOSFETs offering significantly lower
voltage drops and comparable switching
speeds. They can also be used as subs-
titutes for high voltage thyristors, electro-
mechanical triggers, and discharge re-
lays. Suitable applications include switch
mode power supplies, DC-DC conver-
ters, resonant converters, laser/x-ray ge-
nerators, and discharge circuits.
1600 V & 1700 V Low Sat IGBTs
These rugged High Voltage NPT devices
are designed for capacitor discharge
applications, featuring a low saturation
voltage, high power density, & high peak
current capability.
These High Voltage NPT IGBTs enable
the elimination of more costly, lower per-
formance solutions such as thyristors or
series connected MOSFETs or IGBTs
typically used at voltages above 1200 V.
Offered as co-packs, they provide a more
complete solution for power conversion
applications to improved efficiency and
reliability due to reduced voltage drop,
lower switching losses and the need for
fewer components.
1600 V & 1700 V Low Sat IGBTs
w/diode
These are rugged High Voltage NPT de-
vices featuring a low saturation voltage.
They are co-packed with SONIC-FRD
Fast Recovery Diodes providing superior
soft recovery characteristics, minimizing
switching noise and eliminating the need
for costly snubber circuits. In addition,
these diodes exhibit low temperature
dependence, rugged performance, very
soft recovery with very low loss/reverse
current.
1600 V & 1700 V High Speed IGBTs
This family of 1600V/1700V IGBTs are
rugged NPT devices targeted for high
voltage applications, requiring 10 μs
short circuit withstand capability. They
are particularly suitable for high voltage
switching applications. IXYS offers its
fast switching “A” version 1700V NPT
IGBTs in co-pack and phaseleg configu-
rations for PWM applications with swit-
ching frequencies upwards of 50kHz.
Common applications include AC motor
speed control, DC servo, robot drives,
DC choppers, UPS, capacitor discharge
circuits, pulser circuits, switch-mode and
resonant-mode power supplies.
1600 V & 1700 V High Speed IGBTs
w/diode
These IGBTs are co-packed versions of
the 1600 V & 1700 V high speed IGBTs.
They are rugged NPT devices offering
high current capabilities with simple
MOS Gate-Control. They are co-packed
with SONIC-FRD fast recovery diodes
that feature superior soft recovery cha-
racteristics, minimizing switching noise
and eliminating the need for costly snub-
ber circuits.
Very High Voltage (2500 V - 4000 V)
IGBTs
IXYS’ unique offering of discrete 2500V
and 4000V VHV IGBTs provide a myriad
of benefits to system designers in high
voltage applications. The very high vol-
tage and current ratings of these parts
coupled with simplified MOS Gate-Cont-
rol greatly reduce the complexity of high
voltage switching. These IGBTs vastly
simplify the circuitry needed for switching
in high voltage designs.
They can enable the use of a single de-
vice in systems whose circuits use mul-
tiple cascaded lower voltage switches.
This device consolidation reduces the
numbers of power devices, while also
improving cost and efficiency by elimina-
ting complex drive and voltage balancing
components. In those applications using
high voltage thyristors, designers sacri-
fice the ability to easily turn-off the switch
without greatly increasing circuit comple-
xity. VHV IGBTs have the ability to turn
switch current on and off, enabling the
designer to implement signal modulati-
on schemes for improved efficiency and
wave shaping, as well as enabling load
disconnect for improved systems safety.
B-series (BiMOSFET) IGBTs
IXYS BiMOSFETs are devices, which
have combined strengths of MOSFETs
and IGBTs. Non-epitaxial construction
and new fabrication processes were used
in making BiMOSFETs a great success.
BiMOSFETs have found many applica-
tions, where high voltage (above 1200V)
MOSFETs are desired but unavailable.
BiMOSFETs have MOSFET-like cha-
racteristics, yet have very low switching
and conduction losses as compared to
an equally rated MOSFET.
R-series (Reverse Blocking) IGBTs
R-series IGBTs are devices with an in-
herent capability to block voltage in both
the forward direction and reverse direc-
tion. The IXRH40N120 can control 40A
continuous and can block 1200 V and
comes in the standard TO-247 package.
The IXRP15N20 can control 15 A and
can block 1200 V. The added feature of
reverse blocking does not compromise
the performance of the RIGBT as com-
pared to state of the art standard IGBTs.
The RIGBT features a low voltage drop
of 2.2 V typical in the on state and can
switch off.
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