MX879R IXYS, MX879R Datasheet - Page 224

• Manufacturer Part Number: MX879R
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX879R

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 120mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

Press-Pack IGBTs
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7 kV (900 V DC link),
2.5 kV (1.25 kV DC link) and 4.5 kV (2.8 kV DC link). The construction of these devices is totally free from wire and solder bonds which all but
eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and
emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which
is further enhanced by direct cooling of the emitter side of the chip
These devices are based on a state of the art punch through (PT) process, which yields exceptional values V
despite the high voltage ratings, yet the devices feature a positive temperature coefficient making them suitable for reliable parallel operation.
Devices available with or without integral anti-parallel diode – a range of complimentary extra fast recovery diodes optimised for use with these
IGBTs are available now with more based on exciting new technologies coming soon, please contact your representative for more information.
They exhibit exceptional power cycling performance – typically an order of magnitude better than modules – making them highly suited to
applications such as induction heating and mass transits where there are repeated cyclic power demands.They are explosion rated making them
a good choice in critical applications such as mining, the petro-chemica industry, and transportation applications. They have a stable short circuit
failure mode which, as well as safety benefits, makes them an ideal choice for medium and high voltage applications where series connection is
required. Press-pack construction is the obvious choice where series connection is needed and the short circuit failure mode allows for the design
in of n+ redundancy.
Typical examples include HVDC, Active VAr controllers and medium voltage drives. They are largely backwardly compatible with standard 2.5 kV and
4.5 kV GTOs in many applications such as AC drives. This makes these parts a simple and economical path to upgrade or refurbish equipment that
previously used GTOs, such as locomotives or medium voltage drives.They are suitable for all cooling options including direct liquid immersion.
Complementary gate drives, mounting clamps and passive components available.
Press-Pack IGBTs - Capsule Types
202
Ø New
Ø T0340VA45G
Ø T0500NC17A
Ø T0510VA45E
Ø T0570VA25G
Ø T0700NC17E
Ø T0800VC15G
Ø T0850VA25E
Ø T1200VC17E
Ø T1600TC17A
Ø T2100TC17E
Part No.
T0160NA45A
T0240NA45E
T0360NA25A
T0500NA25E
T0600TA45A
T0800TA45E
T0900EA45A
T1200EA45E
T1200TA25A
T1500TA25E
T1800GA45A
T2400GA45E
OR
Type
W40 Weight 500 g
4500
4500
4500
2500
2500
1700
4500
2500
4500
1700
4500
1700
2500
4500
4500
2500
1700
2500
1700
4500
1700
4500
V
V
CES
1200
1200
1200
1500
1600
1800
2100
2400
160
240
340
360
500
500
510
570
600
700
800
800
850
900
I
A
C
1000
1000
1140
1000
1400
1340
1600
1700
1500
2100
2400
2400
3000
3200
3000
4200
4200
310
400
570
720
850
I
W41 Weight 1200 g
A
CM
V
I
F
CE(sat)
4.7
4.7
4.7
3.6
3.6
4.7
3.6
4.7
4.7
3.6
4.7
4.7
3.6
3.6
4.7
4.7
= I
V
In Development
In Development
In Development
C
In Development
IGBT Switching
0.50
0.73
0.75
0.80
1.75
2.20
2.80
3.50
2.50
3.30
E
5.6
7.2
J
ON
Typical
W44 Weight 1200 g
0.42
0.88
0.34
0.50
1.50
1.92
2.60
4.00
1.40
1.70
E
6.4
7.8
OFF
J
In Development
In Development
In Development
In Development
In Development
In Development
I
2320
F
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
3.6
2.5
3.6
3.6
3.6
2.5
V
V
= I
F
C
1400
1440
400
N/A
250
N/A
N/A
N/A
N/A
N/A
670
N/A
N/A
N/A
N/A
1.7
I
A
rm
Diode Recovery
W45 Weight 2000 g
Typical
0.96
0.93
0.92
1.50
1.50
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
2.2
µs
t
rr
1900
2720
340
N/A
285
N/A
N/A
650
N/A
N/A
N/A
830
N/A
N/A
N/A
N/A
µC
Q
r
Outlines on pages O-01...O-24
CE(sat)
W67 Weight 680 g
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
T
°C
JM
and quiet switching behavior
WESTCODE
0.053
0.035
0.054
0.039
0.054
0.023
0.034
0.021
0.039
0.015
0.034
0.023
0.014
0.010
0.017
0.023
0.013
0.017
0.007
0.013
0.005
IGBT
K/W
0.07
R
thJK
Diode
0.175
0.058
0.087
0.087
0.044
0.044
0.044
0.029
0.035
0.029
0.014
K/W
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
W40
W40
W67
W40
W40
W40
W67
W67
W41
W40
W41
W67
W67
W44
W44
W41
W67
W41
W41
W45
W41
W45
Fig.
No.