TB6561NG Toshiba, TB6561NG Datasheet - Page 12
![IC DRIVER DUAL FULL BRDG 24SDIP](/photos/7/45/74530/tb6561ng_sml.jpg)
TB6561NG
Manufacturer Part Number
TB6561NG
Description
IC DRIVER DUAL FULL BRDG 24SDIP
Manufacturer
Toshiba
Type
Dual Full Bridge Motor Driverr
Datasheet
1.TB6561NG.pdf
(14 pages)
Specifications of TB6561NG
Applications
DC Motor Driver, H Bridge
Number Of Outputs
2
Voltage - Load
10 V ~ 36 V
Voltage - Supply
10 V ~ 36 V
Operating Temperature
-20°C ~ 85°C
Mounting Type
Through Hole
Package / Case
24-SDIP (0.300", 7.62mm)
Operating Supply Voltage
10 V to 40 V
Supply Current
10 mA
Mounting Style
Through Hole
Functions
Driver
Vopmax (vm*)
36V (40V)
Io (lpeak)
(1.5A)
Channel
2-ch
Pwm Drive
direct PWM
Package
NDIP24
Rohs Compatible†
yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
TB6561NG(O)
TB6561NG(O)
TB6561NGO
TB6561NGO
TB6561NG(O)
TB6561NGO
TB6561NGO
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TB6561NG
Manufacturer:
Toshiba
Quantity:
4
Part Number:
TB6561NG
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Notes on Contents
1. Block Diagrams
2. Equivalent Circuits
3. Timing Charts
4. Application Circuits
5. Test Circuits
IC Usage Considerations
[1]
[2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in
[3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into
[4] Do not insert devices in the wrong orientation or incorrectly.
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified
for explanatory purposes.
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for
explanatory purposes.
Timing charts may be simplified for explanatory purposes.
The application circuits shown in this document are provided for reference purposes only. Thorough
evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
Notes on handling of ICs
The
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
case of over current and/or IC failure. The IC will fully break down when used under conditions that
exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal
pulse noise occurs from the wiring or load, causing a large current to continuously flow and the
breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case
of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location,
are required.
the design to prevent device malfunction or breakdown caused by the current resulting from the
inrush current at power ON or the negative current resulting from the back electromotive force at
power OFF. IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is
unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation
or incorrectly even just one time.
absolute maximum ratings of a semiconductor device are a set of ratings that must not be
12
TB6561NG
2010-08-25