TLP350 Toshiba, TLP350 Datasheet - Page 24
![IC PHOTOCOUPLER IRED 8-DIP](/photos/7/67/76758/lf1__8-dip_sml.jpg)
TLP350
Manufacturer Part Number
TLP350
Description
IC PHOTOCOUPLER IRED 8-DIP
Manufacturer
Toshiba
Specifications of TLP350
Voltage - Isolation
3750Vrms
Number Of Channels
1, Unidirectional
Current - Output / Channel
2.5A
Propagation Delay High - Low @ If
260ns @ 5mA ~ 0mA
Current - Dc Forward (if)
20mA
Input Type
DC
Output Type
Push-Pull, Totem-Pole
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TLP350
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
TLP350(D4,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TLP350(F)
Manufacturer:
TOSHIBA
Quantity:
250
Part Number:
TLP350(F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TLP350(TP1Ј¬F)
Manufacturer:
TOSHIBA
Quantity:
7 500
Part Number:
TLP350(TP1,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TLP3501
Manufacturer:
TOS
Quantity:
5 510
Company:
Part Number:
TLP3501
Manufacturer:
VIKING
Quantity:
5 510
Company:
Part Number:
TLP3502
Manufacturer:
TOSHIBA
Quantity:
6 000
Part Number:
TLP3502
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
4
Photocouplers for IGBT/MOSFET Gate Drive
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
TLP151*
TLP151A*
TLP155E
TLP2451
TLP2451A*
TLP350
TLP350F
TLP350H*
TLP350HF*
TLP351
TLP351F
TLP351A*
TLP351AF*
TLP351H*
TLP351HF*
TLP352*
TLP352F*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
Selection Guide
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
8
1
8
1
8
1
8
1
8
1
8
1
6
1
6
1
7
2
7
2
7
2
7
2
7
2
7
2
7
2
5
5
6
3
6
3
6
3
: Design which meets safety standard/approval pending as of January 2011
6
3
6
3
6
3
6
3
4
3
4
3
5
4
5
4
5
4
5
4
5
4
5
4
5
4
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
Low power dissipation
DIP8
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
T
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
DIP8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
opr
opr
opr
opr
opr
opr
= 110°C (max)
= 100°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.7 μs
0.5 μs
0.2 μs
0.7 μs
0.5 μs
0.5 μs
0.5 μs
0.7 μs
0.7 μs
0.7 μs
0.2 μs
24
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Output
±0.6 A
±0.6 A
±0.6 A
±2.5 A
±2.5 A
±2.5 A
±0.6 A
±0.6 A
±6.0 A
: Design which meets safety standard/approval pending as of January 2011
5 mA
7.5 mA
5 mA
5 mA
5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
I
FHL
Vrms
Vrms
Vrms
Vrms
Vrms
3750
3750
3750
3750
3750
3750
Vrms
3750
Vrms
3750
Vrms
3750
Vrms
BVs
UL/cUL TÜV
/
/
/
/
/
/
/
/
/
/
/
Safety Standards
VDE
(1)
(1)
BSI
(2)
IEC