HCNR201-300E Avago Technologies US Inc., HCNR201-300E Datasheet - Page 8

• Manufacturer Part Number: HCNR201-300E
• Description: OPTOCOUPLER ANLG DC-1MHZ GW 8SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of HCNR201-300E

• Output Type: Linear Photovoltaic
• Input Type: DC
• Package / Case: 8-SMD Gull Wing
• Number Of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 0.36% @ 10mA
• Current Transfer Ratio (max): 0.72% @ 10mA
• Current - Dc Forward (if): 25mA
• Mounting Type: Surface Mount, Gull Wing
• Current Transfer Ratio: 0.36 % to 0.72 %
• Forward Current: 1 mA to 20 mA
• Isolation Voltage: 5000 Vrms
• Minimum Forward Diode Voltage: 1.2 V
• Output Device: Photodiode
• Configuration: 1 Channel
• Maximum Forward Diode Voltage: 1.95 V
• Maximum Reverse Diode Voltage: 2.5 V
• Maximum Input Diode Current: 25 mA
• Maximum Power Dissipation: 60 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Photodiode
• Input Current: 20mA
• Output Voltage: 15V
• Opto Case Style: SMD
• No. Of Pins: 8
• Forward Voltage: 1.6V
• Rohs Compliant: Yes
• Forward Current If: 25mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Current - Output / Channel: -
• Vce Saturation (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1609-5

Electrical Specifications
T
Parameter
Transfer Gain
Temperature
Coefficient of
Transfer Gain
DC NonLinearity
(Best Fit)
DC Nonlinearity
(Ends Fit)
Input Photo‑
diode Current
Transfer Ratio
(I
Temperature
Coefficient
of K
Photodiode
Leakage Current
Photodiode
Reverse Break‑
down Voltage
Photodiode
Capacitance
LED Forward
Voltage
LED Reverse
Breakdown
Voltage
Temperature
Coefficient of
Forward Voltage
LED Junction
Capacitance
8
A
= 25°C unless otherwise specified.
PD1
/I
1
F
)
∆K
∆K
∆V
Symbol
BV
NL
NL
C
C
BV
F
K
3
K
V
1
I
LK
/∆T
LED
/∆T
/∆T
PD
RPD
3
1
F
BF
EF
R
A
A
A
HCNR200
HCNR201
HCNR201
HCNR200
HCNR201
HCNR201
HCNR200
HCNR201
Device
Min.
0.85
0.95
0.93
0.25
0.36
1.3
1.2
2.5
30
0.016
1.00
1.00
1.00
0.01
0.01
0.01
0.50
0.48
Typ.
‑65
‑0.3
150
‑1.7
0.5
1.6
1.6
22
80
9
Max.
1.15
1.05
1.07
0.25
0.05
0.07
0.75
0.72
1.85
1.95
25
ppm/°C
mV/°C
Units
%/°C
nA
pF
pF
%
%
%
V
V
V
5 nA < I
0 V < V
5 nA < I
0 V < V
‑40°C < T
5 nA < I
0 V < V
‑40°C < T
5 nA < I
0 V < V
5 nA < I
0 V < V
5 nA < I
0 V < V
‑40°C < T
5 nA < I
0 V < V
5 nA < I
0 V < V
I
0 V < V
‑40°C < T
I
0 V < V
I
0 V < V
I
V
I
I
‑40°C < T
I
I
f = 1 MHz,
V
F
F
F
R
F
F
F
F
F
PD
= 10 mA,
= 10 mA
= 0 mA,
= 100 µA
= 10 mA
= 10 mA,
= 100 µA
= 10 mA
= 0 V
Test Conditions
= 0 V
PD
PD
PD
PD1
PD
PD
PD
PD
PD
PD1
PD
PD
PD
PD
PD
PD
PD
PD
PD
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
A
A
A
A
A
< 15 V
< 15 V
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 85°C,
< 85°C,
< 85°C,
< 85°C,
< 85°C
Fig.
4,5,
2,3
2,3
10
9,
6
7
7
8
Note
1
1
1
2
2
2
3