TLP112(TPR,F) Toshiba, TLP112(TPR,F) Datasheet - Page 25
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TLP112(TPR,F)
Manufacturer Part Number
TLP112(TPR,F)
Description
TRANSCOUPLER HS TRANS OUT 5-MSOP
Manufacturer
Toshiba
Specifications of TLP112(TPR,F)
Number Of Channels
1
Input Type
DC
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
10% @ 16mA
Voltage - Output
15V
Current - Output / Channel
8mA
Current - Dc Forward (if)
25mA
Output Type
Transistor with Vcc
Mounting Type
Surface Mount
Package / Case
5-MSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vce Saturation (max)
-
Current Transfer Ratio (max)
-
Other names
TLP112FTR
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
Photocouplers for IGBT/MOSFET Gate Drive (Continued)
TLP557
TLP700
TLP700F
TLP700H*
TLP700HF*
TLP701
TLP701F
TLP701A*
TLP701AF*
TLP701H*
TLP701HF*
TLP705
TLP705F
TLP705A*
TLP705AF*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
6
1
6
1
6
1
6
1
6
1
6
1
6
1
7
2
5
5
5
5
5
5
5
2
2
2
2
2
2
2
: Design which meets safety standard/approval pending as of January 2011
6
3
4
3
4
3
4
3
4
3
4
3
4
3
4
3
5
4
DIP8
Direct drive of a power
transistor
SDIP6
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
SDIP6
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
SDIP6
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
SDIP6
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
High speed (250 kHz)
Low power dissipation
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
High speed
Low power dissipation
opr
opr
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.5 μs
0.7 μs
0.7 μs
0.5 μs
0.7 μs
0.2 μs
0.2 μs
5 μs
25
Constant current
output : 0.25 A
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
±0.45 A
Output
±2.0 A
±2.0 A
±0.6 A
±0.6 A
±0.6 A
±0.6 A
: Design which meets safety standard/approval pending as of January 2011
7.5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
5 mA
5 mA
8 mA
I
FHL
2500
Vrms
Vrms
5000
Vrms
Vrms
Vrms
5000
Vrms
Vrms
Vrms
5000
5000
5000
5000
5000
BVs
UL/cUL TÜV
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Safety Standards
VDE
BSI
(2)
IEC