MT4LSDT864HG-13EG2 Micron Technology Inc, MT4LSDT864HG-13EG2 Datasheet - Page 12
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MT4LSDT864HG-13EG2
Manufacturer Part Number
MT4LSDT864HG-13EG2
Description
MODULE SDRAM 64MB 144SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT4LSDT864HY-133G2.pdf
(22 pages)
Specifications of MT4LSDT864HG-13EG2
Memory Type
SDRAM
Memory Size
64MB
Speed
133MHz
Package / Case
144-SODIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
144SODIMM
Device Core Size
64b
Organization
8Mx64
Total Density
64MByte
Chip Density
128Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
660mA
Number Of Elements
4
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
144
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 9:
Notes: 1, 5, 6; notes appear on page 16; V
Table 10: I
Notes: 1, 5, 6, 11, 13; notes appear on page 16; V
09005aef80748a77
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode; Burst = 2; READ or
WRITE;
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH;
All device banks active after
progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ
or WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; S# = HIGH
SELF REFRESH CURRENT: CKE
(Low power not available with industrial
temperature option)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs, NC or I/O Pins
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
t
RC =
t
RC (MIN)
V
DC Electrical Characteristics and Operating Conditions
DD
V
OUT
DD
IN
Supply
Specifications and Conditions – 32MB
V
V
OUT
DD
OUT
DD
Q
= 4mA)
= -4mA)
t
RCD met; No accesses in
0.2V
DD
t
t
RFC =
RFC = 15.625µs
, V
Low Power (L)
DD
Standard
DD
Q = +3.3V ±0.3V
t
RFC (MIN)
Command and
Address Inputs
CK, S#
DQMB
DQ
, V
DD
Q = +3.3V ±0.3V
12
SYMBOL
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
1
2
3
4
5
6
7
7
32MB, 64MB, 128MB (x64, SR)
V
SYMBOL
T
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
OPR
OPR
V
V
V
, V
I
V
OZ
OH
I
OL
IH
IL
I
-13E
DD
(Commercial - ambient) . . . . . 0°C to + 65°C
(Industrial - ambient) . . . . . . --40°C to +85°C
500
180
600
920
12
8
4
2
144-PIN SDRAM SODIMM
Q
MAX
MIN
-0.3
-133
-20
-20
2.4
460
180
560
840
-5
-5
12
3
2
–
8
4
2
-10E
V
MAX
380
140
480
760
12
3.6
DD
0.3
0.8
0.4
8
4
2
20
20
5
5
–
+
©2004 Micron Technology, Inc. All rights reserved.
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
UNITS
µA
µA
µA
µA
V
V
V
V
V
3, 18, 19, 29
3, 12, 19, 29
3, 18, 19, 29
3, 12, 18,
19, 29,30
NOTES
NOTES
29
3
22
22
33
33