MT4LSDT864HG-13EG2 Micron Technology Inc, MT4LSDT864HG-13EG2 Datasheet - Page 18
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MT4LSDT864HG-13EG2
Manufacturer Part Number
MT4LSDT864HG-13EG2
Description
MODULE SDRAM 64MB 144SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT4LSDT864HY-133G2.pdf
(22 pages)
Specifications of MT4LSDT864HG-13EG2
Memory Type
SDRAM
Memory Size
64MB
Speed
133MHz
Package / Case
144-SODIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
144SODIMM
Device Core Size
64b
Organization
8Mx64
Total Density
64MByte
Chip Density
128Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
660mA
Number Of Elements
4
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
144
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 16: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 17: EEPROM Operating Modes
09005aef80748a77
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
Memory Area Select Code (two arrays)
Protection Register Select Code
MODE
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA OUT
SDA IN
SCL
t SU:STA
Figure 9: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
b6
IH
IH
IH
IH
1
0
WC
V
V
DEVICE TYPE IDENTIFIER
or V
or V
or V
or V
IL
IL
t HIGH
t HD:DAT
IL
IL
IL
IL
b5
0
1
18
BYTES
1
1
1
1
16
1
t DH
b5
32MB, 64MB, 128MB (x64, SR)
1
1
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
INITIAL SEQUENCE
START, Device Select, RW = 1
START, Device Select, RW = 0, Address
reSTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
t SU:DAT
144-PIN SDRAM SODIMM
b4
0
0
SA2
SA2
b3
CHIP ENABLE
©2004 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0