MT16LSDF6464HY-133D2 Micron Technology Inc, MT16LSDF6464HY-133D2 Datasheet - Page 13
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MT16LSDF6464HY-133D2
Manufacturer Part Number
MT16LSDF6464HY-133D2
Description
MODULE SDRAM 512MB 144-SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16LSDF6464HY-13ED2.pdf
(22 pages)
Specifications of MT16LSDF6464HY-133D2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
144-SODIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
144SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.096A
Number Of Elements
16
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
144
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT16LSDF6464HY-133D2
Manufacturer:
MICRON
Quantity:
1 575
Company:
Part Number:
MT16LSDF6464HY-133D2 PCB
Manufacturer:
SIEMENS
Quantity:
201
Table 12: I
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; V
Table 13: Capacitance
Note 2; notes appear on page 16
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
PARAMETER/CONDITION
Operating current: Active mode; Burst = 2; READ or WRITE;
t
Standby current: Power-down mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active mode;
CKE = HIGH; CS# = HIGH; All device banks active after
met; No accesses in progress
OPERATING CURRENT: Burst mode; Continuous burst; READ
or WRITE; All device banks active
Auto refresh current
CKE = HIGH; S# = HIGH
Self refresh current: CKE < 0.2V
a - Value calculated as one module rank in this operating condition, and all other ranks in power-down mode.
b - Value calculated reflects all module ranks in this operation condition.
PARAMETER
Input capacitance: Address and command
Input capacitance: CK
Input capacitance: CKE, S#
Input capacitance: DQMB
Input/output capacitance: DQ
RC =
t
RC (MIN)
DD
Specifications and Conditions – 512MB
t
t
RFC =
RFC = 7.8125µs
Low power (L)
Standard
t
RFC (MIN)
t
RCD
13
SYMBOL
SYMBOL
C
C
C
C
C
I
I
I
I
I
I
I
I
IO
I1
I2
I3
I4
DD
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
7
a
b
a
a
b
b
b
b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
1,096
1,096
4,560
-13E
336
144-PIN SDRAM SODIMM
32
56
40
24
, V
256MB, 512MB (x64, DR)
MIN
DD
40
20
20
5
8
Q = +3.3V ±0.3V
MAX
1,016 1,016
1,096 1,096
4,320 4,320
-133
336
32
56
40
24
-10E
336
32
56
40
24
©2006 Micron Technology, Inc. All rights reserved.
MAX
60.8
30.4
7.6
28
12
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
3, 12, 18, 19,
3, 12, 19, 32
3, 18, 19, 32
3, 17,19, 32
NOTES
UNITS
32,30
32
pF
pF
pF
pF
pF
4