MT16LSDF6464HY-133D2 Micron Technology Inc, MT16LSDF6464HY-133D2 Datasheet - Page 14

• Manufacturer Part Number: MT16LSDF6464HY-133D2
• Description: MODULE SDRAM 512MB 144-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDF6464HY-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 144SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 144
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14: Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11, 31; notes appear on page 16; comply with PC100 and PC133 specifications, based on SDRAM device
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
AC CHARACTERISTICS
PARAMETER
Access time from
CLK (positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold
time
CS#, RAS#, CAS#, WE#, DQM setup
time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE
command
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
SYMBOL
t
t
t
t
t
t
t
t
t
AC(3)
AC(2)
t
t
t
CK(3)
CK(2)
t
HZ(3)
HZ(2)
t
t
CMH
t
t
OHN
t
t
CMS
t
t
t
CKH
RCD
RRD
t
CKS
t
RAS
t
t
XSR
t
t
REF
RFC
OH
WR
AH
DH
CH
AS
CL
DS
RC
RP
t
LZ
T
1 CLK
+ 7ns
MIN
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
37
60
15
66
15
14
14
67
7
1
3
-13E
120,000
14
MAX
5.4
5.4
5.4
5.4
1.2
64
1 CLK +
7.5ns
MIN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
10
44
66
20
66
20
15
15
75
1
3
-133
144-PIN SDRAM SODIMM
120,000
256MB, 512MB (x64, DR)
MAX
5.4
5.4
1.2
64
6
6
1 CLK
+ 7ns
MIN
1.8
0.3
10
50
70
20
70
20
20
15
80
1
2
3
3
8
1
2
1
2
1
2
1
3
-10E
120,000
©2006 Micron Technology, Inc. All rights reserved.
MAX
1.2
64
6
6
6
6
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
27
23
23
10
10
28
32
24
25
20
7