MT16LSDF6464HY-133D2 Micron Technology Inc, MT16LSDF6464HY-133D2 Datasheet - Page 4

MODULE SDRAM 512MB 144-SODIMM

MT16LSDF6464HY-133D2

Manufacturer Part Number
MT16LSDF6464HY-133D2
Description
MODULE SDRAM 512MB 144-SODIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16LSDF6464HY-133D2

Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
144-SODIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
144SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.096A
Number Of Elements
16
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
144
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT16LSDF6464HY-133D2
Manufacturer:
MICRON
Quantity:
1 575
Part Number:
MT16LSDF6464HY-133D2 PCB
Manufacturer:
SIEMENS
Quantity:
201
Table 6:
Pin numbers may not correlate with symbols; refer to the Pin Assignment tables on page 3 for more information
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
3, 4, 5, 6, 7, 8, 9, 10, 13, 14, 15,
23, 24, 25, 26, 115, 116, 117,
40, 41, 42, 43, 44, 47, 48, 49,
50, 51, 52, 53, 54, 83, 84, 85,
86, 87, 88, 89, 90, 93, 94, 95,
96, 97, 98, 99, 100, 121, 122,
123, 124, 125, 126, 127, 128,
131, 132, 133, 134, 135, 136,
16, 17, 18,19, 20, 37, 38, 39,
70 (512MB), 103, 104, 105,
29, 30, 31, 32, 33, 34,
PIN NUMBERS
109, 111, 112
65, 66, 67
106, 110
137, 138
61, 74
62, 68
69, 71
118
142
141
Pin Descriptions
RAS#, CAS#, WE#
DQMB0–DQMB7
CKE0, CKE1
DQ0–DQ63
SYMBOL
BA0, BA1
CK0, CK1
(256MB)
(512MB)
A0–A11
A0–A12
S0#,S1#
SDA
SCL
Output
Output
Input/
Input/
TYPE
Input
Input
Input
Input
Input
Input
Input
Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define
the command being entered.
Clock: CK is driven by the system clock. All SDRAM input
signals are sampled on the positive edge of CK. CK also
increments the internal burst counter and controls the output
registers.
Clock enable: CKE activates (HIGH) and deactivates (LOW) the
CK signal. Deactivating the clock provides PRECHARGE power-
down and SELF REFRESH operation (all device banks idle),
ACTIVE power-down (row ACTIVE in any device bank), or
CLOCK SUSPEND operation (burst access in progress). CKE is
synchronous except after the device enters power-down and
self refresh modes, where CKE becomes asynchronous until
after exiting the same mode. The input buffers, including CK,
are disabled during power-down and self refresh modes,
providing low standby power.
Chip select: S# enables (registered LOW) and disables
(registered HIGH) the command decoder. All commands are
masked when S# is registered HIGH. S# is considered part of
the command code.
Input/output mask: DQMB is an input mask signal for write
accesses and an output enable signal for read accesses. Input
data is masked when DQMB is sampled HIGH during a WRITE
cycle. The output buffers are placed in a High-Z state (two-
clock latency) when DQMB is sampled HIGH during a READ
cycle.
Bank address: BA0 and BA1 define to which device bank the
ACTIVE, READ, WRITE, or PRECHARGE command is being
applied.
Address inputs: Provide the row address for ACTIVE commands
and the column address and auto precharge bit (A10) for
READ/WRITE commands, to select one location out of the
memory array in the respective device bank. A10 sampled
during a PRECHARGE command determines whether the
PRECHARGE applies to one device bank (A10 LOW, device
bank selected by BA0, BA1) or all device banks (A10 HIGH).
The address inputs also provide the op-code during a MODE
REGISTER SET command.
Serial clock for presence-detect: scl is used to synchronize the
presence-detect data transfer to and from the module.
Serial presence-detect data: sda is a bidirectional pin used to
transfer addresses and data into and data out of the presence-
detect portion of the module.
Data I/O: Data bus.
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
DESCRIPTION
©2006 Micron Technology, Inc. All rights reserved.

Related parts for MT16LSDF6464HY-133D2