MT16LSDT6464AG-133D2 Micron Technology Inc, MT16LSDT6464AG-133D2 Datasheet - Page 22

• Manufacturer Part Number: MT16LSDT6464AG-133D2
• Description: MODULE SDRAM 512MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDT6464AG-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 22: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. E 12/05 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Number of Bytes Used by Micron
Total Number of SPD Memory Bytes
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of Module Ranks
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
SDRAM Access From Clock,
3)
Module Configuration Type
Refresh Rate/type
SDRAM Width (Primary SDRAM)
Error-Checking SDRAM Data Width
Minimum Clock Delay,
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
SDRAM Access From Clock,
2)
SDRAM Cycle Time,
SDRAM Access From Clock,
1)
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
Command Address Setup,
DESCRIPTION
t
CK ,(CAS Latency = 1)
t
t
CK, (CAS Latency = 3)
CK, (CAS Latency = 2)
t
CCD
t
AS
t
t
t
AC, (CAS Latency =
AC, (CAS Latency =
AC, (CAS Latency =
t
RAS (See note 1)
t
RCD
t
RP
t
RRD
ENTRY(VERSION)
22
1, 2, 4, 8, PAGE
128MB (x64, SR), 256MB (x64, DR)
5.4 (-13E/-133)
1.5 (-13E/-133)
15.625µs/SELF
10 (-133/-10E)
20 (-133/-10E)
20 (-133/-10E)
UNBUFFERED
6 (-133/-10E)
NONPARITY
7.5 (-133)
7.5 (13E)
54 (-13E)
15 (-13E)
14 (-13E)
15 (-133)
20 (-10E)
15 (-13E)
45 (-13E)
44 (-133)
50 (-10E)
SDRAM
7 (-13E)
8 (-10E)
6 (-10E)
2 (-10E)
128MB
LVTTL
NONE
1 or 2
128
256
2, 3
12
10
64
0E
0
8
1
4
0
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
168-PIN SDRAM UDIMM
MT8LSDT1664AG MT16LSDT3264AG
0A
A0
2D
80
08
04
0C
01
40
00
01
70
75
80
54
60
00
80
08
00
01
8F
04
06
01
01
00
0E
75
54
60
00
00
0F
14
0E
0F
14
0F
14
2C
32
20
15
20
©2003, 2004 Micron Technology, Inc. All rights reserved.
0A
A0
2D
80
08
04
0C
02
40
00
01
70
75
80
54
60
00
80
08
00
01
04
06
01
01
00
0E
75
54
60
00
00
14
0E
14
14
2C
32
20
15
20
8F
0F
0F
0F