MT18VDDT6472AG-335G4 Micron Technology Inc, MT18VDDT6472AG-335G4 Datasheet - Page 10

• Manufacturer Part Number: MT18VDDT6472AG-335G4
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDT6472AG-335G4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.611A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 6:
NOTE:
Table 7:
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
LENGTH
1. For a burst length of two, A1–Ai select the two-data-
2. For a burst length of four, A2–Ai select the four-data-
3. For a burst length of eight, A3–Ai select the eight-data-
4. Whenever a boundary of the block is reached within a
5. i = 9, 11 (256MB and 512MB);
BURST
element block; A0 selects the first access within the
block.
element block; A0–A1 select the first access within the
block.
element block; A0–A2 select the first access within the
block.
given sequence above, the following access wraps
within the block.
i = 9, 11, 12 (1GB and 2GB).
2
4
8
SPEED
-26A
-262
-265
-202
A2 A1 A0
0
0
0
0
1
1
1
1
STARTING
ADDRESS
COLUMN
Burst Definition Table
CAS Latency (CL) Table
A1 A0
0
0
1
1
0
0
1
1
0
0
1
1
A0
75
75
75
75
0
1
0
1
0
1
0
1
0
1
0
1
0
1
CLOCK FREQUENCY (MHz)
CL = 2
ALLOWABLE OPERATING
f
f
f
f
ORDER OF ACCESSES WITHIN
0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
SEQUENTIAL
133
133
100
100
TYPE =
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1
1-0
A BURST
75
75
75
INTERLEAVED
CL = 2.5
NA
TYPE =
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
f
f
f
0-1
1-0
133
133
133
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
10
Read Latency
between the registration of a READ command and the
availability of the first bit of output data. The latency
can be set to 2 or 2.5 clocks, as shown in Figure 6, CAS
Latency Diagram.
and the latency is m clocks, the data will be available
nominally coincident with clock edge n + m. Table 7,
CAS Latency (CL) Table, indicates the operating fre-
quencies at which each CAS latency setting can be
used.
known operation or incompatibility with future ver-
sions may result.
Operating Mode
MODE REGISTER SET command with bits A7–A11
(256MB); A7–A12 (512MB and 1GB); or A7–A13 (2GB)
each set to zero, and bits A0–A6 set to the desired val-
ues. A DLL reset is initiated by issuing a MODE REGIS-
TER SET command with bits A7 and A9–A11 (256MB);
A7 and A9–A12 (512MB and 1GB); or A7–A13 (2GB)
each set to zero, bit A8 set to one, and bits A0–A6 set to
the desired values.
Micron device, JEDEC specifications recommend
when a LOAD MODE REGISTER command is issued to
COMMAND
COMMAND
The READ latency is the delay, in clock cycles,
If a READ command is registered at clock edge n,
Reserved states should not be used, because un-
The normal operating mode is selected by issuing a
DQS
DQS
CK#
CK#
DQ
DQ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Figure 6: CAS Latency Diagram
CK
CK
184-PIN DDR SDRAM RDIMM
READ
READ
Burst Length = 4 in the cases shown
Shown with nominal t AC, t DQSCK, and t DQSQ
T0
T0
CL = 2
TRANSITIONING DATA
Although not required by the
CL = 2.5
NOP
NOP
T1
T1
©2004 Micron Technology, Inc. All rights reserved.
T2
NOP
NOP
T2
T2n
T2n
DON’T CARE
T3
NOP
NOP
T3
T3n
T3n