MT4VDDT864AG-265B1 Micron Technology Inc, MT4VDDT864AG-265B1 Datasheet - Page 12
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MT4VDDT864AG-265B1
Manufacturer Part Number
MT4VDDT864AG-265B1
Description
MODULE SDRAM DDR 64MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT4VDDT864AG-265B1.pdf
(28 pages)
Specifications of MT4VDDT864AG-265B1
Memory Type
DDR SDRAM
Memory Size
64MB
Speed
266MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14, 48; notes appear on pages 18–21; 0°C ≤ T
Table 11: AC Input Operating Conditions
Notes: 1–5, 14, 49; notes appear on pages 18–21; 0°C ≤ T
pdf: 09005aef8085081a, source: 09005aef806e129d
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input, 0V ≤ V
V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQ pins are disabled; 0V ≤ V
OUTPUT LEVELS: Full drive option
High Current (V
Low Current (V
OUTPUT LEVELS: Reduced drive option
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
REF
Stresses greater than those listed may cause perma-
V
V
V
I/O Pins Voltage
REF
DD
DD
pin 0V ≤ V
Relative to V
Relative to Vss. . . . . . . . . . . . . -0.5V to V
Q Supply Voltage Rel. to Vss . . . . . . . -1V to +3.6V
Supply Voltage Relative to Vss . . . . -1V to +3.6V
and Inputs Voltage
PARAMETER/CONDITION
OUT
OUT
IN
OUT
OUT
≤ 1.35V
IN
PARAMETER/CONDITION
= V
= V
SS
= 0.373V, maximum V
= 0.763V, maximum V
≤ V
DD
DD
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
DD
Q - 0.373V, minimum V
Q - 0.763V, minimum V
,
OUT
≤ V
DD
Q)
REF
REF
, maximum V
,maximum V
REF
REF
Command/
Address, S#, CKE
CK, CK#
DM
DQ, DQS
DD
, minimum V
, minimum V
Q +0.5V
A
A
SYMBOL
TT
V
TT
V
V
≤ +70°C
≤ +70°C; V
REF
)
IH
IL
)
TT
TT
(AC)
(AC)
12
(AC)
)
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
SYMBOL
V
V
V
64MB, 128MB, 256MB (x64, SR)
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
V
I
V
IH
I
IL
V
I
OHR
DD
I
I
DD
OLR
OH
OZ
OL
V
REF
0.49 x V
I
I
I
DD
(
(
TT
I
I
I
DC
DC
T
T
REF
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q
= V
184-PIN DDR SDRAM UDIMM
A
A
)
)
MIN
(ambient - commercial) . . . . . . . . . 0°C to +70°C
(ambient - industrial) . . . . . . . . . -40°C to +85°C
+ 0.310
–
DD
0.49 x V
V
DD
Q = +2.5V ±0.2V
V
REF
REF
Q
-16.8
MIN
16.8
-0.3
2.3
2.3
-8
-4
-2
-5
-9
+ 0.15
9
- 0.04
DD
0.51 x V
V
REF
Q 0.51 x V
MAX
- 0.310
–
V
V
V
REF
REF
DD
DD
MAX
2.7
2.7
Q
+ 0.04
8
4
2
5
–
–
–
–
- 0.15
+ 0.3
DD
Q
UNITS
V
V
V
UNITS
mA
mA
mA
mA
©2004 Micron Technology, Inc.
µA
µA
µA
µA
V
V
V
V
V
V
12, 25, 36
12, 25, 36
NOTES
32, 37, 40
NOTES
32, 37
33, 35
34, 35
6
6, 40
7, 40
25
25
47
47
47
47