MT4VDDT864AG-265B1 Micron Technology Inc, MT4VDDT864AG-265B1 Datasheet - Page 27

• Manufacturer Part Number: MT4VDDT864AG-265B1
• Description: MODULE SDRAM DDR 64MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT864AG-265B1

• Memory Type: DDR SDRAM
• Memory Size: 64MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 21: Serial Presence- Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 27
NOTE:
pdf: 09005aef8085081a, source: 09005aef806e129d
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
1. Value for -26A/-265
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
4. The value of
99-127 Manufacturer-Specific Data (RSVD)
48–61 Reserved
BYTE
36-40 Reserved
65-71 Manufacturer’s JEDEC ID Code (cont.)
73-90 Module Part Number (ASCII)
95-98 Module Serial Number
31
32
33
34
35
41
42
43
44
45
46
47
62
63
64
72
91
92
93
94
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-
mum slew rate is met.
SDRAM device specification is 15ns.
Module Rank Density
Address and Command Setup Time,
(See note 3)
Address and Command Hold Time,
(See note 3)
Data/Data Mask Input Setup Time,
Data/Data Mask Input Hold Time,
Minimum Active/Auto Refresh Time,
t
Minimum Auto Refresh to Active/
Auto Refresh Command Period,
Maximum Cycle Time,
Maximum DQS-DQ Skew Time,
Maximum Read Data Hold Skew
Factor,
Reserved
DIMM Height
SPD Revision
Checksum For Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturing Location
PCB Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
Week of Manufacture in BCD
RC
t
QHS
t
t
RAS used for the -26A/-265 module is calculated from
RP,
t
DESCRIPTION
RCD and
t
CK set to 7ns (0x70) for optimum BIOS compatibility. Actual device spec value is 7.5ns.
t
t
RAP for -335 modules indicated as 18ns to align with industry specifications; actual DDR
CK (MAX)
t
DQSQ
t
RFC
t
DH
t
t
DS
IH
t
IS
1.0ns (-262/-26A/-265)
1.0ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
75ns (-262/-26A/-265)
13ns (-262/-26A/-265)
ENTRY (VERSION)
64MB, 128MB, or
65ns (-26A/-265)
60ns (-335/-262)
0.45ns (-335)
0.45ns (-335)
0.45ns (-335)
0.55ns (-335)
0 .8ns (-335)
0.8ns (-335)
Release 1.0
72ns (-335)
12ns (-335)
Standard
MICRON
256MB
1 - 12
-26A
-335
-262
-265
1 - 9
0
27
64MB, 128MB, 256MB (x64, SR)
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT4VDDT864A MT4VDDT1664A MT4VDDT3264A
RC-
184-PIN DDR SDRAM UDIMM
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0C
01 - 09
t
RP. Actual device spec. value is 40ns.
A0
A0
2D
10
80
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
01
00
10
FC
BC
EC
2C
00
8F
FF
–
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0C
01 - 09
A0
A0
2D
A2
20
80
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
01
00
10
0F
CF
2C
00
FF
FF
–
©2004 Micron Technology, Inc.
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0C
01 - 09
A0
A0
2D
40
80
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
01
00
10
33
C3
20
2C
00
F0
FF
–