MT4VDDT864AG-26AB1 Micron Technology Inc, MT4VDDT864AG-26AB1 Datasheet - Page 14

• Manufacturer Part Number: MT4VDDT864AG-26AB1
• Description: MODULE SDRAM DDR 64MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT864AG-26AB1

• Memory Type: DDR SDRAM
• Memory Size: 64MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 13: I
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 48; notes appear on pages 18–21; 0°C ≤ T
pdf: 09005aef8085081a, source: 09005aef806e129d
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
OPERATING CURRENT: One device bank; Active-Precharge;
t
per clock cycle; Address and control inputs changing once every
two clock cycles.
OPERATING CURRENT: One device bank; Active-Read-Precharge;
Burst = 4;
and control inputs changing once per clock cycle.
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks
idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
once per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge;
DM, and DQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle.
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
device bank active; Address and control inputs changing once per
clock cycle;
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once per
clock cycle;
twice per clock cycle.
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Four device bank interleaving READs (BL =
4) with auto precharge,
and control inputs change only during Active, READ, or WRITE
commands.
RC (MIN);
CK (MIN); CKE = HIGH; Address and other control inputs changing
t
t
RC =
CK =
t
t
CK =
CK =
t
DD
t
RC (MIN);
CK (MIN); DQ, DM, and DQS inputs changing once
t
t
CK (MIN); I
CK (MIN); DQ, DM, and DQS inputs changing
PARAMETER/CONDITION
Specifications and Conditions – 128MB
IN
t
t
= V
RC =
RC =
t
CK =
t
CK =
t
REF
CK =
OUT
t
t
RAS (MAX);
RC (MIN);
t
for DQ, DQS, and DM.
CK (MIN); CKE = LOW.
t
= 0mA.
CK (MIN); I
t
CK (MIN); CKE = LOW.
t
CK =
t
CK =
OUT
t
t
REFC =
REFC = 7.8125µs
t
CK (MIN); Address
= 0mA; Address
t
CK (MIN); DQ,
t
RFC (MIN)
t
RC =
t
14
CK =
A
≤ +70°C; V
64MB, 128MB, 256MB (x64, SR)
I
I
I
SYM
I
I
I
I
DD 4 W
I
I
DD 3 N
DD 4 R
I
DD 5A
I
I
DD 2 P
DD 2 F
DD 3 P
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD 0
DD 1
DD 5
DD 6
DD 7
184-PIN DDR SDRAM UDIMM
DD
= V
1,020
1,760
-335
500
680
200
120
240
700
780
16
24
16
DD
Q = +2.5V ±0.2V
MAX
1,520
-262
500
640
180
100
200
600
640
940
16
24
16
-26A/
1,520
-265
480
580
180
100
200
600
640
940
16
24
16
UNITS
©2004 Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
NOTES
21, 28,
21, 28,
20, 42
20, 42
20, 42
24, 44
20, 43
44
45
44
20
20
44
9