MT4VDDT864AG-26AB1 Micron Technology Inc, MT4VDDT864AG-26AB1 Datasheet - Page 24
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT4VDDT864AG-26AB1
Manufacturer Part Number
MT4VDDT864AG-26AB1
Description
MODULE SDRAM DDR 64MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT4VDDT864AG-265B1.pdf
(28 pages)
Specifications of MT4VDDT864AG-26AB1
Memory Type
DDR SDRAM
Memory Size
64MB
Speed
266MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 17: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 18: EEPROM Operating Modes
pdf: 09005aef8085081a, source: 09005aef806e129d
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
SDA OUT
SELECT CODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
MODE
t SU:STA
Figure 15: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
t HIGH
t HD:DAT
IL
IL
IL
IL
b7
1
0
DEVICE TYPE IDENTIFIER
24
BYTES
≤ 16
≥ 1
1
1
1
1
b6
0
1
t DH
64MB, 128MB, 256MB (x64, SR)
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
START, Device Select, RW = “1”
START, Device Select, RW = “0”, Address
reSTART, Device Select, RW = “1”
Similar to Current or Random Address Read
START, Device Select, RW = “0”
START, Device Select, RW = “0”
b5
t SU:DAT
1
1
b4
0
0
INITIAL SEQUENCE
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
©2004 Micron Technology, Inc.
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0